BSS127H6327XTSA2 vs BSS123IXTSA1 对比

详细并排对比 BSS127H6327XTSA2 出自 Infineon 和 BSS123IXTSA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
BSS127H6327XTSA2 BSS127H6327XTSA2 - 600V N-Ch MOSFET, 21mA, SOT-23 | Infineon

BSS127H6327XTSA2 - 600V N-Ch MOSFET, 21mA, SOT-23 | Infineon

BSS127H6327XTSA2 ✓ 量产中
Infineon
BSS123IXTSA1 BSS123IXTSA1 - 100V N-Ch 190mA OptiMOS MOSFET | Infineon

BSS123IXTSA1 - 100V N-Ch 190mA OptiMOS MOSFET | Infineon

BSS123IXTSA1 ✓ 量产中

规格对比

参数 BSS127H6327XTSA2 BSS123IXTSA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.03 $0.11
FET Type N-Channel SIPMOS, enhancement mode —
Drain-Source Voltage (VDS) 600 V 100 V
Continuous Drain Current (ID) 21 mA (Ta) —
Pulsed Drain Current (ID,pulse) [DATA_NEEDED: pulsed ID limit] —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(th)) 4.5 V (logic level, rated) [DATA_NEEDED: VGS(th) min/typ/max]
On-State Resistance (RDS(on)) max 500 ohm at ID = 21 mA —
Total Power Dissipation (Ptot) 500 mW (Ta) —
工作结温 -55 C to +150 C —
封装 SOT-23-3 (PG-SOT23) PG-SOT-23-3 (SOT-23-3)
安装类型 Surface Mount Surface Mount
引脚数量 3 —
dv/dt Rated Yes —
Automotive Qualification AEC-Q101 —
RoHS 状态 Compliant (lead-free) —
无卤 Yes, per IEC 61249-2-21 —
MSL 等级 [DATA_NEEDED: MSL rating] [DATA_NEEDED: MSL rating]
晶体管类型 — N-Channel MOSFET
Technology — OptiMOS Small-Signal
Continuous Drain Current (ID) at TA=25C — 190 mA
Power Dissipation (PD) at TA=25C — 500 mW
RDS(on) (typical, VGS=10 V) — 2.4 ohm
RDS(on) (max per family datasheet) — 6 ohm
工作温度范围 — -55C to +150C (per family datasheet)
Qualification — Industrial
Configuration — Single N-Channel
Lead-Free / RoHS — Yes (per distributor listing)
Gate Drive Logic Level — Logic-level compatible

数据手册与资源

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