BSZ065N03LSATMA1 vs BSZ036NE2LSATMA1 对比
详细并排对比 BSZ065N03LSATMA1 出自 Infineon 和 BSZ036NE2LSATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | BSZ065N03LSATMA1 | BSZ036NE2LSATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.38 | $0.42 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 30V | — |
| 晶体管类型 | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 30 V | 25 V |
| Continuous Drain Current (ID) at TA=25C | 12 A | 16 A |
| Continuous Drain Current (ID) at TC=25C | 40 A | 40 A |
| Power Dissipation (PD) at TA=25C | 2.1 W | 2.1 W |
| Power Dissipation (PD) at TC=25C | 26 W | 37 W |
| 封装 / 外壳 | PG-TSDSON-8-FL (S308) | — |
| 安装类型 | Surface Mount | Surface Mount |
| Configuration | Single N-Channel | Single |
| Technology | Trench MOSFET (OptiMOS) | — |
| 工作温度范围 | -55C to +150C (junction) | -55C to +150C |
| MSL 等级 | 1 | 1 (Unlimited) |
| RoHS 状态 | Compliant | Compliant |
| Gate Drive (typical) | 4.5 V | — |
| Product Family | — | OptiMOS 25V |
| Polarity / Channel Type | — | N-Channel |
| 封装 | — | PG-TSDSON-8-FL (5x6 mm) |
| Lead-Free | — | Yes |
| Gate Drive | — | Logic-level compatible |