BSZ065N03LSATMA1 vs BSZ036NE2LSATMA1 Comparison
Detailed side-by-side comparison of BSZ065N03LSATMA1 by Infineon and BSZ036NE2LSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | BSZ065N03LSATMA1 | BSZ036NE2LSATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 30V | — |
| Transistor Type | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 30 V | 25 V |
| Continuous Drain Current (ID) at TA=25C | 12 A | 16 A |
| Continuous Drain Current (ID) at TC=25C | 40 A | 40 A |
| Power Dissipation (PD) at TA=25C | 2.1 W | 2.1 W |
| Power Dissipation (PD) at TC=25C | 26 W | 37 W |
| Package / Case | PG-TSDSON-8-FL (S308) | — |
| Mounting Type | Surface Mount | Surface Mount |
| Configuration | Single N-Channel | Single |
| Technology | Trench MOSFET (OptiMOS) | — |
| Operating Temperature Range | -55C to +150C (junction) | -55C to +150C |
| MSL Level | 1 | 1 (Unlimited) |
| RoHS Status | Compliant | Compliant |
| Gate Drive (typical) | 4.5 V | — |
| Product Family | — | OptiMOS 25V |
| Polarity / Channel Type | — | N-Channel |
| Package | — | PG-TSDSON-8-FL (5x6 mm) |
| Lead-Free | — | Yes |
| Gate Drive | — | Logic-level compatible |