BTS3118NHUMA1 vs BSL606SNH6327XTSA1 对比
详细并排对比 BTS3118NHUMA1 出自 Infineon 和 BSL606SNH6327XTSA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | BTS3118NHUMA1 | BSL606SNH6327XTSA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | Power MOSFET Drivers | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.62 | $0.19 |
| FET Type | N-Channel | — |
| Switch Type | Low-Side Power Switch | — |
| 输出配置 | 1:1 | — |
| 输出数量 | 1 | — |
| Continuous Drain Current | 2.17 A | — |
| Operating Voltage (Vbb) | 6 V to 18 V nominal (overvoltage protected) | — |
| On-State Resistance (RDS(on)) | [DATA_NEEDED: typical RDS(on) at 25C] | — |
| Input Logic Level | Logic-level (3.3 V / 5 V MCU compatible) | — |
| Input Protection | ESD protected | — |
| Thermal Protection | Thermal shutdown with latch | — |
| Fault Protection | Overload, short-circuit, overvoltage, current limit | — |
| 封装 | PG-SOT223-4 | PG-TSOP6-6 (6-pin, SOT-23-6 compatible) |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度 | -40 C to +150 C junction | — |
| RoHS Compliance | Green product, RoHS compliant | — |
| Process Technology | Smart SIPMOS (vertical N-channel) | — |
| 晶体管类型 | — | N-Channel MOSFET (Enhancement Mode) |
| Technology | — | OptiMOS3 trench MOSFET |
| Drain-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) at Ta | — | 4.5 A |
| Static Drain-Source On-Resistance (RDS(on)) | — | 60 mOhm (max, VGS = 10 V) |
| Total Power Dissipation (PD) at Ta | — | 2 W |
| Gate-Source Voltage (VGS) | — | +/-20 V (max) |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/min] |
| Total Gate Charge (Qg) | — | 5.6 nC (max) |
| 工作温度范围 | — | -55C to +150C (Tj) |
| Qualification | — | AEC-Q101 (Automotive) |
| RoHS 状态 | — | Compliant (Pb-free plating) |
| MSL 等级 | — | 1 (per JEDEC J-STD-020) |