E3AD8G16A4-HR vs MT40A512M16LY-075 对比
详细并排对比 E3AD8G16A4-HR 出自 ELIXIR/NANYA 和 MT40A512M16LY-075 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | E3AD8G16A4-HR | MT40A512M16LY-075 |
|---|---|---|
| 品牌 | ELIXIR/NANYA | Micron Technology |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $8.60 | $27.89 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| 存储组织 | 512M x 16 | 512M x 16 |
| Density | 8 Gb | 8 Gbit |
| 电源电压 | 1.2 V | — |
| 封装 | TFBGA-96 | 96-FBGA (7.5x13.5 mm) |
| 数据速率 | 3200 MT/s | DDR4-2666 |
| CAS 延迟 | 22 | — |
| Burst Length | 8 (BC4 optional) | — |
| Number of Banks | 16 (4 bank groups) | — |
| Refresh | Auto-refresh and self-refresh | — |
| 工作温度 | 0C to +95C (TCASE) | — |
| RoHS | Compliant | — |
| Lead-Free | Yes | — |
| 安装类型 | Surface Mount | Surface Mount |
| Speed Grade | DDR4-3200 | — |
| Clock Speed | — | 1.33 GHz |
| Supply Voltage (VDD/VDDQ) | — | 1.2V ±60mV |
| VPP Supply | — | 2.5V (-125mV, +250mV) |
| I/O Type | — | 1.2V pseudo open-drain |
| Internal Banks (x16) | — | 8 (2 groups of 4 banks) |
| Refresh Time at TC -40°C to 85°C | — | 64ms |
| Refresh Time at TC >85°C to 95°C | — | 32ms |
| Refresh Time at TC >95°C to 105°C | — | 16ms |
| 工作温度范围 | — | 0°C to +95°C |