EP3SE80F1152C3N vs EP3SE260F1152C3N 对比
详细并排对比 EP3SE80F1152C3N 出自 Intel 和 EP3SE260F1152C3N 出自 Intel。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Intel
EP3SE260F1152C3N - Stratix III E FPGA, 255K LE, 744 I/O, 1152-FBGA | Intel
EP3SE260F1152C3N ✓ 量产中规格对比
| 参数 | EP3SE80F1152C3N | EP3SE260F1152C3N |
|---|---|---|
| 品牌 | Intel | Intel |
| 分类 | FPGA & CPLD | FPGA & CPLD |
| 生命周期状态 | 不推荐新设计 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1,690.00 | $7,500.00 |
| Series | Stratix III E | Stratix III E |
| Logic Elements (LEs) | 80,000 | — |
| Total Memory Bits | 6,843,392 bits | — |
| Number of LABs/CLBs | 3200 | — |
| Number of User I/O | 744 | — |
| 输出数量 | 744 | — |
| 封装 / 外壳 | 1152-BBGA, FCBGA (FineLine BGA) | — |
| 工作温度 | 0C to +85C (commercial, C3 grade) | 0 C to +85 C (Commercial) |
| Speed/Power Grade | C3 | — |
| Process Technology | 40 nm CMOS | 65 nm |
| 安装类型 | Surface Mount | Surface Mount |
| Lead Free | Yes | — |
| MSL 等级 | 3 (per JEDEC J-STD-020) | — |
| Configuration Memory | SRAM-based, volatile (needs external config device) | — |
| RoHS 状态 | Compliant | Compliant |
| Logic Elements / Cells | — | 255,000 |
| Embedded Memory Bits | — | 16,672,768 bits |
| Logic Array Blocks (LABs) | — | 10,200 |
| User I/O Count | — | 744 |
| 封装 | — | 1152-BBGA, FCBGA |
| Core Voltage | — | 1.1 V |
| Transceivers | — | Integrated high-speed transceivers |
| DSP Blocks | — | Yes (dedicated multiplier/accumulator) |
| Embedded Memory Type | — | TriMatrix (true dual-port, FIFO, ROM, RAM) |
| External Memory Support | — | DDR3, DDR2, QDR II+, RLDRAM II |
| Configuration Modes | — | AS, AP, PS, FPP, JTAG |
| Partial Reconfiguration | — | Supported |
| Programmable Power Technology | — | Yes (up to 50% dynamic power reduction) |