H58G56AK6QX032N vs MT53E1G64D4HJ-046 对比
详细并排对比 H58G56AK6QX032N 出自 SK hynix 和 MT53E1G64D4HJ-046 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | H58G56AK6QX032N | MT53E1G64D4HJ-046 |
|---|---|---|
| 品牌 | SK hynix | Micron Technology |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $13.40 | $435.25 |
| 存储器类型 | LPDDR5 SDRAM | Mobile LPDDR4X SDRAM |
| Density | 32Gb (4GB) | 64 Gbit |
| 存储组织 | 512M x 64 | 1G x 64 |
| 数据速率 | 6400 Mbps per pin | — |
| Bus Width | x16 (x64 variant per sourcing data) | — |
| Core Voltage (VDD) | 0.5 V | — |
| I/O Voltage (VDDQ) | 0.5 V | — |
| Interface Voltage (VDD2) | 1.8 V / 1.05 V | — |
| 封装 | FBGA-315 | 556-WFBGA (12.4 x 12.4 mm) |
| 安装类型 | Surface Mount | Surface Mount |
| Grade | Automotive | — |
| Applications | Data storage, firmware boot, embedded logging, industrial controllers, computing modules | — |
| Standard | JEDEC LPDDR5 | — |
| RoHS 状态 | [DATA_NEEDED: RoHS status] | Compliant |
| 工作温度 | [DATA_NEEDED: operating temperature range] | -30C to +85C |
| Reflow/MSL Rating | [DATA_NEEDED: MSL level] | — |
| 接口 | — | Parallel |
| Clock Frequency | — | 2.133 GHz |
| Access Time | — | 3.5 ns |
| 电源电压 | — | 1.1 V / 1.8 V |
| Package Style | — | TFBGA, 556/841 ball, QDP |
| Built-in Temperature Sensor | — | Yes |
| Auto Precharge | — | Yes |
| Write Leveling | — | Yes |
| ZQ Calibration | — | Yes |
| AEC-Q100 | — | Qualified (automotive variants AUT/AIT/AAT) |