H5AN4G6NBJR-UHC vs H5AN4G6NBJR-RDC 对比

详细并排对比 H5AN4G6NBJR-UHC 出自 SK hynix 和 H5AN4G6NBJR-RDC 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

SK hynix
H5AN4G6NBJR-UHC H5AN4G6NBJR-UHC - 4Gb DDR4 SDRAM 256Mx16 FBGA-96 | SK Hynix

H5AN4G6NBJR-UHC - 4Gb DDR4 SDRAM 256Mx16 FBGA-96 | SK Hynix

H5AN4G6NBJR-UHC ✓ 量产中
SK hynix
H5AN4G6NBJR-RDC H5AN4G6NBJR-RDC - 4Gb DDR4 SDRAM 256Mx16 TFBGA-96 | SK hynix

H5AN4G6NBJR-RDC - 4Gb DDR4 SDRAM 256Mx16 TFBGA-96 | SK hynix

H5AN4G6NBJR-RDC ✓ 量产中

规格对比

参数 H5AN4G6NBJR-UHC H5AN4G6NBJR-RDC
品牌 SK hynix SK hynix
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $8.09 $6.15
存储器类型 DDR4 SDRAM DDR4 SDRAM
存储容量 4 Gbit —
存储组织 256M x 16 256M x 16
Clock Frequency 1.6 GHz —
Supply Voltage (VDD) 1.14 V to 1.26 V —
Technology CMOS —
工作温度 -40C to +95C —
封装 FBGA-96 (PBGA-96) —
安装类型 Surface Mount Surface Mount
Self Refresh Auto self-refresh Auto / Self Refresh
Data Mask Function Yes (DM) Yes
Asynchronous Reset Yes (RESET_n) Yes
On-Die Termination Dynamic ODT Dynamic ODT
ZQ Calibration Yes Yes
Write Leveling Yes Yes
CRC Function Yes (command/address CRC) Yes
RoHS 状态 Compliant —
Density — 4 Gb
电源电压 — 1.2 V
接口 — CMOS, fully synchronous
Package Code — TFBGA (FBGA-96)
Package Shape — Rectangular
Package Width — 7.5 mm
Number of Terminals — 96
Temperature Grade — OTHER (per Partstack listing); -I industrial option -40C to +95C per family datasheet
Lead-Free / Halogen-Free — Yes (per datasheet cover: Lead-Free & Halogen-Free)
Speed Grade — -RDC (see manufacturer datasheet for validated data-rate bin)

数据手册与资源

浏览全部产品 创建 BOM 获取报价