H5AN4G8NBJR-PBC vs H5AN4G8NBJR-UHCR 对比

详细并排对比 H5AN4G8NBJR-PBC 出自 SK hynix 和 H5AN4G8NBJR-UHCR 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

SK hynix
H5AN4G8NBJR-PBC H5AN4G8NBJR-PBC - 4Gb DDR4 SDRAM 512Mx8 FBGA-78 | SK hynix

H5AN4G8NBJR-PBC - 4Gb DDR4 SDRAM 512Mx8 FBGA-78 | SK hynix

H5AN4G8NBJR-PBC ✓ 量产中
SK hynix
H5AN4G8NBJR-UHCR H5AN4G8NBJR-UHCR - 4Gb DDR4 SDRAM 2400 | SK hynix

H5AN4G8NBJR-UHCR - 4Gb DDR4 SDRAM 2400 | SK hynix

H5AN4G8NBJR-UHCR ✓ 量产中

规格对比

参数 H5AN4G8NBJR-PBC H5AN4G8NBJR-UHCR
品牌 SK hynix SK hynix
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $2.20 $3.18
Memory Density 4 Gbit —
存储组织 512M x 8 512M x 8
存储器类型 DDR4 SDRAM DDR4 SDRAM
接口类型 Parallel, JEDEC DDR4 —
Supply Voltage VDD 1.2 V —
Supply Voltage VDDQ 1.2 V —
Speed Grade PBC UH (DDR4-2400 class, PC2400)
Clock Frequency [DATA_NEEDED: Clock Frequency] —
CAS Latency (CL) [DATA_NEEDED: CAS Latency] —
封装 78-ball FBGA 78-ball FBGA (11 mm x 7.5 mm)
安装类型 Surface Mount Surface Mount (BGA solder-down)
Normal Operating Case Temperature 0C to 85C —
Extended Temperature Range up to 95C case (with increased refresh) Up to +95C case temperature (per datasheet conditions)
Lead Free Yes Yes
无卤 Yes Yes
Refresh 8n prefetch, standard/auto refresh per DDR4 JEDEC [DATA_NEEDED: refresh rate 1x/2x specification]
Density — 4 Gbit
电源电压 — 1.2 V (VDD)
接口 — DDR4 SSTL12
Internal Prefetch — 8n
Operating Case Temperature — -40C to +85C (industrial range)
RoHS 状态 — Compliant
Packaging Suffix — -R = Tape and Reel
CAS 延迟 — [DATA_NEEDED: CL value for UH grade]

数据手册与资源

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