H5AN4G8NBJR-RDC vs H5AN4G8NBJR-VKI 对比

详细并排对比 H5AN4G8NBJR-RDC 出自 SK hynix 和 H5AN4G8NBJR-VKI 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

SK hynix
H5AN4G8NBJR-RDC H5AN4G8NBJR-RDC - 4Gb DDR4 SDRAM x8 | SK hynix | Main Memory

H5AN4G8NBJR-RDC - 4Gb DDR4 SDRAM x8 | SK hynix | Main Memory

H5AN4G8NBJR-RDC ✓ 量产中
SK hynix
H5AN4G8NBJR-VKI H5AN4G8NBJR-VKI - 4Gb DDR4 SDRAM x8 2666Mbps | SK hynix

H5AN4G8NBJR-VKI - 4Gb DDR4 SDRAM x8 2666Mbps | SK hynix

H5AN4G8NBJR-VKI ✓ 量产中

规格对比

参数 H5AN4G8NBJR-RDC H5AN4G8NBJR-VKI
品牌 SK hynix SK hynix
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $2.95 $1.98
存储器类型 DDR4 SDRAM DDR4 SDRAM
Density 4 Gbit 4 Gb
存储组织 512M x 8 512M x 8
接口 DDR4 (Double Data Rate IV) —
封装 78-ball FBGA FBGA-78
安装类型 Surface Mount Surface Mount
电源电压 [DATA_NEEDED: VDD supply voltage] 1.2 V
数据速率 [DATA_NEEDED: speed grade Mbps] 2666 Mbps
Bank Architecture 8 banks with 4 bank groups (x8) —
Refresh Auto-refresh and self-refresh [DATA_NEEDED: Refresh specification]
Temperature Grade [DATA_NEEDED: operating temperature range] Industrial (I suffix)
Termination On-Die Termination (ODT) On-Die Termination (ODT)
RoHS 状态 Lead-Free & Halogen-Free (RoHS Compliant) [DATA_NEEDED: RoHS Status]
Process Technology CMOS —
Manufacturer SK hynix —
Family Series H5AN4G4/8/6NBJR —
I/O Voltage — 1.2 V (SSTL12)
Speed Grade — V (2666)
Architecture — CMOS, 8n prefetch, bank groups
DBI Support — Yes (Data Bus Inversion / DM)
CAS 延迟 — [DATA_NEEDED: CAS Latency]
工作温度 — [DATA_NEEDED: Operating Temperature]

数据手册与资源

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