H5AN4G8NBJR-UHC vs H5AN4G8NBJR-VKIR 对比

详细并排对比 H5AN4G8NBJR-UHC 出自 SK hynix 和 H5AN4G8NBJR-VKIR 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

SK hynix
H5AN4G8NBJR-UHC H5AN4G8NBJR-UHC - 4Gb DDR4 SDRAM 2400, 1.2V | SK Hynix

H5AN4G8NBJR-UHC - 4Gb DDR4 SDRAM 2400, 1.2V | SK Hynix

H5AN4G8NBJR-UHC ✓ 量产中
SK hynix
H5AN4G8NBJR-VKIR H5AN4G8NBJR-VKIR - 4Gb DDR4 2666Mbps DRAM | SK hynix

H5AN4G8NBJR-VKIR - 4Gb DDR4 2666Mbps DRAM | SK hynix

H5AN4G8NBJR-VKIR ✓ 量产中

规格对比

参数 H5AN4G8NBJR-UHC H5AN4G8NBJR-VKIR
品牌 SK hynix SK hynix
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $3.18 $1.98
存储器类型 DDR4 SDRAM DDR4 SDRAM
Density 4 Gbit 4 Gb
存储组织 512M x 8 512M x 8
数据速率 2400 Mbps (PC2400) 2666 Mbps per pin
电源电压 1.2 V —
接口 DDR4 (JEDEC) —
封装 TFBGA-78 (11 x 7.5 mm) 78-ball FBGA
安装类型 Surface Mount Surface Mount
Technology CMOS DRAM CMOS DRAM
Lifecycle Code Active —
RoHS 状态 Compliant (Rohs Code: Yes) —
REACH Compliance Compliant —
Manufacturer SK Hynix Inc. —
工作温度 [DATA_NEEDED: operating temperature range] —
CAS 延迟 [DATA_NEEDED: CAS latency for -UHC speed bin] [DATA_NEEDED: CAS latency]
Refresh [DATA_NEEDED: refresh rate 1x/2x/4x support] [DATA_NEEDED: refresh interval specification]
Supply Voltage (VDD) — 1.2 V
Operating Temperature (Industrial) — -40C to +85C (case)
Extended Temperature Range — +85C to +95C (case, per datasheet conditions)
Product Family — H5AN4G4/6/8NBJR series
Speed Grade Code — -VKI
Packing Suffix — R (Tape & Reel)
VPP Supply — [DATA_NEEDED: VPP supply voltage]
Package Dimensions — [DATA_NEEDED: package dimensions]

数据手册与资源

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