H5AN8G6NAFR-PBC vs H5AN8G6NAFR-UHC 对比

详细并排对比 H5AN8G6NAFR-PBC 出自 SK hynix 和 H5AN8G6NAFR-UHC 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

SK hynix
H5AN8G6NAFR-PBC H5AN8G6NAFR-PBC - 8Gb DDR4 SDRAM 1.2V TFBGA-96 | SK hynix

H5AN8G6NAFR-PBC - 8Gb DDR4 SDRAM 1.2V TFBGA-96 | SK hynix

H5AN8G6NAFR-PBC ✓ 量产中
SK hynix
H5AN8G6NAFR-UHC H5AN8G6NAFR-UHC - 8Gb DDR4 SDRAM 512Mx16 | SK hynix

H5AN8G6NAFR-UHC - 8Gb DDR4 SDRAM 512Mx16 | SK hynix

H5AN8G6NAFR-UHC ✓ 量产中

规格对比

参数 H5AN8G6NAFR-PBC H5AN8G6NAFR-UHC
品牌 SK hynix SK hynix
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $3.55 $5.74
存储器类型 DDR4 SDRAM DDR4 SDRAM
Density 8 Gbit 8 Gb
存储组织 512M x 16 512M x 16
VDD Supply Voltage 1.20 V +/- 0.06 V —
VDDQ Supply Voltage 1.20 V +/- 0.06 V —
VPP Supply Voltage 2.5 V +0.25/-0.125 V —
接口类型 DDR4 (parallel, double data rate) —
Speed Bins Supported DDR4-1600 / 1866 / 2133 / 2400 (datasheet speed bin tables) —
Refresh Auto / Self Refresh Auto self-refresh
DLL DLL ON mode for speed bin operation —
Clock Differential clock (CK/CK#) —
封装 TFBGA-96 (rectangular) FBGA-96
Number of Terminals 96 96
安装类型 Surface Mount —
工作温度 [DATA_NEEDED: operating temperature range] 0°C to +85°C
RoHS 状态 Compliant (Lead-Free & Halogen-Free) —
Composition CMOS —
电源电压 — 1.2 V
数据速率 — 2400 MT/s
Package Code — TFBGA
Lead-Free — Yes
无卤 — Yes
RoHS Compliant — Yes
CAS 延迟 — [DATA_NEEDED: CAS Latency]
Burst Length — 8, 4 (with burst chop)

数据手册与资源

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