H5AN8G6NAFR vs K4A8G165WB-BCWE 对比
详细并排对比 H5AN8G6NAFR 出自 SK hynix 和 K4A8G165WB-BCWE 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | H5AN8G6NAFR | K4A8G165WB-BCWE |
|---|---|---|
| 品牌 | SK hynix | Samsung Electronics |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.12 | $6.55 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 8 Gb |
| 存储组织 | 512M x 16 | 512M x 16 |
| 电源电压 | 1.2 V | 1.2 V |
| 数据速率 | 2400 MT/s | 3200 Mbps |
| 封装 | 96-ball FBGA | 96FBGA |
| 工作温度 | 0°C to +85°C | 0C to +85C |
| Lead-Free | Yes | — |
| 无卤 | Yes | — |
| RoHS Compliant | Yes | — |
| Auto Self-Refresh | Yes | — |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| Data Mask | Yes | — |
| Dynamic ODT | Yes | — |
| ZQ Calibration | Yes | — |
| CRC | Yes | — |
| Write Leveling | Yes | — |
| Access Time (CAS Latency) | — | 19 ns |
| 接口 | — | Parallel |
| 安装类型 | — | Surface Mount |
| Burst Length | — | 8 |
| Bank Group Architecture | — | Yes |
| On-Die Termination (ODT) | — | Yes, dynamic ODT with ZQ calibration |
| Functions | — | Auto precharge, asynchronous reset, CRC, data mask |
| RoHS 状态 | — | Compliant |
| Lead Free | — | Yes |