H5AN8G6NAFR vs K4A8G165WB-BCWE Comparison
Detailed side-by-side comparison of H5AN8G6NAFR by SK hynix and K4A8G165WB-BCWE by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A8G165WB-BCWE
K4A8G165WB-BCWE - 8Gb DDR4 SDRAM 3200Mbps 1.2V | Samsung
K4A8G165WB-BCWE β ActiveSpecification Comparison
| Parameter | H5AN8G6NAFR | K4A8G165WB-BCWE |
|---|---|---|
| Brand | SK hynix | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.12 | $6.55 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 8 Gb |
| Organization | 512M x 16 | 512M x 16 |
| Supply Voltage | 1.2 V | 1.2 V |
| Data Rate | 2400 MT/s | 3200 Mbps |
| Package | 96-ball FBGA | 96FBGA |
| Operating Temperature | 0Β°C to +85Β°C | 0C to +85C |
| Lead-Free | Yes | β |
| Halogen-Free | Yes | β |
| RoHS Compliant | Yes | β |
| Auto Self-Refresh | Yes | β |
| Auto Precharge | Yes | β |
| Asynchronous Reset | Yes | β |
| Data Mask | Yes | β |
| Dynamic ODT | Yes | β |
| ZQ Calibration | Yes | β |
| CRC | Yes | β |
| Write Leveling | Yes | β |
| Access Time (CAS Latency) | β | 19 ns |
| Interface | β | Parallel |
| Mounting Type | β | Surface Mount |
| Burst Length | β | 8 |
| Bank Group Architecture | β | Yes |
| On-Die Termination (ODT) | β | Yes, dynamic ODT with ZQ calibration |
| Functions | β | Auto precharge, asynchronous reset, CRC, data mask |
| RoHS Status | β | Compliant |
| Lead Free | β | Yes |