H5AN8G6NAFR vs K4A8G165WB-BCWE Comparison
Detailed side-by-side comparison of H5AN8G6NAFR by SK hynix and K4A8G165WB-BCWE by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A8G165WB-BCWE - 8Gb DDR4 3200Mbps 96FBGA DRAM | Samsung
K4A8G165WB-BCWE ✓ ActiveSpecification Comparison
| Parameter | H5AN8G6NAFR | K4A8G165WB-BCWE |
|---|---|---|
| Brand | SK hynix | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | — | In Stock |
| Unit Price (USD) | — | $6.25 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | — |
| Organization | 512M x 16 | — |
| Supply Voltage | 1.2 V | 1.2 V |
| Data Rate | 2400 MT/s | 3200 Mbps/pin |
| Package | 96-ball FBGA | 96FBGA |
| Operating Temperature | 0°C to +85°C | 0C to +85C |
| Lead-Free | Yes | — |
| Halogen Free | Yes | — |
| RoHS Compliant | Yes | — |
| Auto Self-Refresh | Yes | — |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| Data Mask | Yes | — |
| Dynamic ODT | Yes | — |
| ZQ Calibration | Yes | — |
| CRC | Yes | — |
| Write Leveling | Yes | — |
| Memory Size | — | 8 Gb |
| Memory Organization | — | 512M x 16 |
| Access Time | — | 19 ns |
| Interface | — | Parallel |
| Mounting Type | — | Surface Mount |
| Memory Format | — | DRAM (volatile) |
| Technology | — | DDR4 SDRAM B-die |
| Prefetch | — | 8n |
| Refresh | — | Self-refresh supported |
| Termination | — | On-die termination (ODT) |
| RoHS Status | — | [DATA_NEEDED: RoHS compliance statement] |
| MSL Level | — | [DATA_NEEDED: moisture sensitivity level] |