H5AN8G8NAFR-UHI vs H5AN8G8NAFR-VKC 对比
详细并排对比 H5AN8G8NAFR-UHI 出自 SK hynix 和 H5AN8G8NAFR-VKC 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | H5AN8G8NAFR-UHI | H5AN8G8NAFR-VKC |
|---|---|---|
| 品牌 | SK hynix | SK hynix |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $4.10 | $4.15 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| Memory Density | 8 Gb | — |
| 存储组织 | 1G x 8 | 1G x 8 |
| 数据速率 | DDR4-2400 (PC2400), 1200 MHz clock | — |
| 电源电压 | 1.2 V | — |
| 接口 | DDR4 (JEDEC-class) | SSTL12 |
| 封装 | 78-ball FBGA | 78-ball FBGA |
| 安装类型 | Surface Mount | Surface Mount |
| Lead Free | Yes | — |
| 无卤 | Yes | — |
| RoHS 状态 | Compliant | Compliant (Lead-Free & Halogen-Free) |
| Technology | CMOS | — |
| Application | Main memory (high density, high bandwidth) | — |
| 工作温度 | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| CAS 延迟 | [DATA_NEEDED: CAS latency for UHI speed grade] | — |
| Refresh | [DATA_NEEDED: refresh specification] | — |
| MSL 等级 | [DATA_NEEDED: moisture sensitivity level] | — |
| Density | — | 8 Gb |
| Speed Grade | — | DDR4-2666 (VKC bin) |
| Supply Voltage (VDD) | — | 1.2 V |
| Burst Length | — | 8 (BL8) |
| Bank Group Architecture | — | Supported (per DDR4 JEDEC architecture) |
| On-Die Termination (ODT) | — | Yes |
| DLL | — | Yes (DLL for output skew control) |
| Process Technology | — | CMOS |
| Recommended Application | — | Main memory requiring large density and high bandwidth |