H5AN8G8NCJR-VKC vs H5AN8G8NCJR-PBC 对比
详细并排对比 H5AN8G8NCJR-VKC 出自 SK hynix 和 H5AN8G8NCJR-PBC 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | H5AN8G8NCJR-VKC | H5AN8G8NCJR-PBC |
|---|---|---|
| 品牌 | SK hynix | SK hynix |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $28.13 | $2.40 |
| 存储器类型 | DDR4 SDRAM (volatile) | DDR4 SDRAM |
| 存储容量 | 8 Gbit | 8 Gb (1 GB) |
| Memory Organization | 1G x 8 | — |
| 数据速率 | 2666 Mbps/pin | [DATA_NEEDED: data rate for -PBC speed grade (Mbps/MT/s)] |
| Clock Frequency | 1.6 GHz | — |
| Supply Voltage (VDD) | 1.14 V to 1.26 V (1.2 V class) | 1.2 V |
| Operating Current (typ) | 30 mA | — |
| Standby Current (typ) | 3 mA | — |
| 工作温度 | 0C to +85C | [DATA_NEEDED: operating temperature range] |
| 封装 | FBGA-78 (78-ball fine-pitch BGA) | 78-ball FBGA |
| 安装类型 | Surface Mount | Surface Mount |
| 接口 | Parallel (DDR4) | — |
| Auto Self-Refresh | Yes | — |
| Data Mask Function | Yes | — |
| Dynamic On-Chip Termination (ODT) | Yes | — |
| Asynchronous Reset | Yes | — |
| ZQ Calibration | Yes | — |
| Write Leveling | Yes | — |
| CRC Function | Yes | — |
| Auto Precharge | Yes | — |
| RoHS 状态 | Compliant | Lead-Free & Halogen-Free |
| CAS 延迟 | [DATA_NEEDED: CAS Latency] | — |
| Refresh Rate | [DATA_NEEDED: refresh period] | — |
| 存储组织 | — | 1G x 8 (x8) |
| Interface Voltage (VDDQ) | — | 1.2 V (SSTL12) |
| Architecture | — | CMOS, fully synchronous, dual-edge clocked |
| Bank Structure | — | 8 internal banks, bank-group architecture |
| Burst Length | — | BL8 |
| 特性 | — | ODT, DM, DQS strobes, programmable CAS latency, self-refresh |
| Die Revision Family | — | CJR (H5AN8G8NCJR-xxC) |
| Refresh | — | Auto-refresh and self-refresh |
| Typical Applications | — | PC/server main memory, embedded solder-down memory |