H5AN8G8NDJR-XNC vs K4A8G085WB-BCRC 对比
详细并排对比 H5AN8G8NDJR-XNC 出自 SK hynix 和 K4A8G085WB-BCRC 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | H5AN8G8NDJR-XNC | K4A8G085WB-BCRC |
|---|---|---|
| 品牌 | SK hynix | Samsung Electronics |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $24.50 | $6.80 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| 存储容量 | 8 Gbit (1 G x 8) | — |
| 数据速率 | 3200 MT/s (DDR4-3200) | 2400 Mbps |
| Supply Voltage (VDD) | 1.14 V to 1.26 V (nominal 1.2 V) | — |
| I/O Voltage (VDDQ) | 1.14 V to 1.26 V (nominal 1.2 V) | — |
| Operating Temperature (TC) | 0°C to +95°C | — |
| 封装 | FBGA-78 (7.5 x 11 mm) | 78-ball FBGA |
| 安装类型 | Surface Mount | — |
| Memory Organization | 1G x 8 | — |
| 接口 | Parallel | — |
| Clock Frequency | 1.6 GHz (I/O clock) | — |
| RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Packaging | Tray | — |
| Status | Active | — |
| Density | — | 8 Gb |
| 存储组织 | — | 1G x 8 |
| 电源电压 | — | 1.2 V |
| 工作温度 | — | 0°C to 85°C |
| Number of Terminals | — | 78 |
| Refresh Cycles | — | 8192 |
| Access Time | — | 0.175 ns |
| Technology | — | CMOS |
| Burst Length | — | 8 and 4 |
| On-Die Termination | — | Yes |
| Auto-Refresh | — | Yes |
| Self-Refresh | — | Yes |