H5AN8G8NDJR-XNC vs K4A8G085WB-BCRC Comparison
Detailed side-by-side comparison of H5AN8G8NDJR-XNC by SK hynix and K4A8G085WB-BCRC by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
SK hynix
H5AN8G8NDJR-XNC
H5AN8G8NDJR-XNC - 8Gb DDR4-3200 SDRAM | SK Hynix
H5AN8G8NDJR-XNC β ActiveSamsung Electronics
K4A8G085WB-BCRC
K4A8G085WB-BCRC - 8Gb DDR4 SDRAM 1Gx8 2400Mbps | Samsung
K4A8G085WB-BCRC β ActiveSpecification Comparison
| Parameter | H5AN8G8NDJR-XNC | K4A8G085WB-BCRC |
|---|---|---|
| Brand | SK hynix | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $24.50 | $6.80 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Memory Size | 8 Gbit (1 G x 8) | β |
| Data Rate | 3200 MT/s (DDR4-3200) | 2400 Mbps |
| Supply Voltage (VDD) | 1.14 V to 1.26 V (nominal 1.2 V) | β |
| I/O Voltage (VDDQ) | 1.14 V to 1.26 V (nominal 1.2 V) | β |
| Operating Temperature (TC) | 0Β°C to +95Β°C | β |
| Package | FBGA-78 (7.5 x 11 mm) | 78-ball FBGA |
| Mounting Type | Surface Mount | β |
| Memory Organization | 1G x 8 | β |
| Interface | Parallel | β |
| Clock Frequency | 1.6 GHz (I/O clock) | β |
| RoHS | Compliant | Compliant |
| Lead-Free | Yes | β |
| Packaging | Tray | β |
| Status | Active | β |
| Density | β | 8 Gb |
| Organization | β | 1G x 8 |
| Supply Voltage | β | 1.2 V |
| Operating Temperature | β | 0Β°C to 85Β°C |
| Number of Terminals | β | 78 |
| Refresh Cycles | β | 8192 |
| Access Time | β | 0.175 ns |
| Technology | β | CMOS |
| Burst Length | β | 8 and 4 |
| On-Die Termination | β | Yes |
| Auto-Refresh | β | Yes |
| Self-Refresh | β | Yes |