H5AN8G8NDJR-XNC vs K4A8G085WB-BCRC Comparison
Detailed side-by-side comparison of H5AN8G8NDJR-XNC by SK hynix and K4A8G085WB-BCRC by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A8G085WB-BCRC - 8Gb DDR4 SDRAM 1Gx8 2400Mbps | Samsung
K4A8G085WB-BCRC ✓ ActiveSpecification Comparison
| Parameter | H5AN8G8NDJR-XNC | K4A8G085WB-BCRC |
|---|---|---|
| Brand | SK hynix | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Memory Size | 8 Gbit (1 G x 8) | — |
| Data Rate | 3200 MT/s (DDR4-3200) | 2400 Mbps |
| Supply Voltage (VDD) | 1.14 V to 1.26 V (nominal 1.2 V) | — |
| I/O Voltage (VDDQ) | 1.14 V to 1.26 V (nominal 1.2 V) | — |
| Operating Temperature (TC) | 0°C to +95°C | — |
| Package | FBGA-78 (7.5 x 11 mm) | 78-ball FBGA |
| Mounting Type | Surface Mount | — |
| Memory Organization | 1G x 8 | — |
| Interface | Parallel | — |
| Clock Frequency | 1.6 GHz (I/O clock) | — |
| RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Packaging | Tray | — |
| Status | Active | — |
| Density | — | 8 Gb |
| Organization | — | 1G x 8 |
| Supply Voltage | — | 1.2 V |
| Operating Temperature | — | 0°C to 85°C |
| Number of Terminals | — | 78 |
| Refresh Cycles | — | 8192 |
| Access Time | — | 0.175 ns |
| Technology | — | CMOS |
| Burst Length | — | 8 and 4 |
| On-Die Termination | — | Yes |
| Auto-Refresh | — | Yes |
| Self-Refresh | — | Yes |