H5AN8G8NDJR vs AS4C512M16D4A-62BCN 对比
详细并排对比 H5AN8G8NDJR 出自 SK hynix 和 AS4C512M16D4A-62BCN 出自 Alliance Memory。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Alliance Memory
AS4C512M16D4A-62BCN - 8Gb DDR4 SDRAM 512Mx16 | Alliance Memory
AS4C512M16D4A-62BCN ✓ 量产中规格对比
| 参数 | H5AN8G8NDJR | AS4C512M16D4A-62BCN |
|---|---|---|
| 品牌 | SK hynix | Alliance Memory |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $24.50 | $7.20 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | — |
| 存储组织 | 1G x 8 | 512M x 16 |
| 数据速率 | 3200 MT/s | 1600 MHz (3200 Mbps) |
| Supply Voltage (VDD) | 1.2 V (1.14V to 1.26V) | — |
| VDDQ | 1.2 V | — |
| VPP | 2.5 V | — |
| 工作温度 | 0°C to +95°C (Tc) | 0°C to 95°C |
| 封装 | FBGA-78 (7.5x11 mm) | 96-FBGA (7.5x13 mm) |
| CAS 延迟 | 22 (typical) | 18 ns |
| tRCD | 22 ns | — |
| tRP | 22 ns | — |
| Burst Length | 8 and 4 (with burst chop) | — |
| Self-Refresh Current | 30 mA (typical) | — |
| Active Standby Current | 60 mA (typical) | — |
| RoHS | Compliant | — |
| Lead-Free | Yes | — |
| 存储容量 | — | 8 Gbit |
| 电源电压 | — | 1.2 V |
| 安装类型 | — | Surface Mount |
| JEDEC Standard | — | Compliant |
| 接口 | — | POD (Pseudo Open Drain) |
| Refresh | — | Auto-refresh and self-refresh |
| On-Die Termination | — | Yes |
| RoHS 状态 | — | Compliant |
| Packaging | — | Tray |