H5TC4G63AFR-G7A vs H5TC4G63AFR-PBR 对比

详细并排对比 H5TC4G63AFR-G7A 出自 SK hynix 和 H5TC4G63AFR-PBR 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

SK hynix
H5TC4G63AFR-G7A H5TC4G63AFR-G7A - 4Gb DDR3L SDRAM 1.35V | SK Hynix

H5TC4G63AFR-G7A - 4Gb DDR3L SDRAM 1.35V | SK Hynix

H5TC4G63AFR-G7A ✓ 量产中
SK hynix
H5TC4G63AFR-PBR H5TC4G63AFR-PBR - 4Gb DDR3L SDRAM 256Mx16 | SK Hynix

H5TC4G63AFR-PBR - 4Gb DDR3L SDRAM 256Mx16 | SK Hynix

H5TC4G63AFR-PBR ✓ 量产中

规格对比

参数 H5TC4G63AFR-G7A H5TC4G63AFR-PBR
品牌 SK hynix SK hynix
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $6.50 $5.91
存储器类型 DDR3L SDRAM DDR3L SDRAM
Density 4Gb —
存储组织 256M x 16 256M x 16
电源电压 1.35V 1.35V (1.5V compatible)
数据速率 1600 Mbps (PC3-12800) 1600 Mbps (PC3L-12800)
封装 96-ball FBGA 96-ball FBGA (PBGA96)
工作温度 0°C to 95°C (case) 0C to +95C
CAS 延迟 Programmable (e.g., 11) 11
Burst Length 8 and 4 8 (BL8) with burst chop (BC4)
Refresh Period 7.8us at 85°C —
On-Die Termination Supported —
RoHS Compliant Compliant
Lead-Free Yes Yes
无卤 Yes Yes
Process Technology CMOS —
Total Capacity — 4Gb
tRCD/tRP — 11
Clock Frequency — 800 MHz
tCK — 1.25 ns
tRCD — 13.125 ns
Number of Banks — 8
Refresh Interval — 7.8us at 85C, 3.9us at 95C
Package Dimensions — 13.5mm x 9.0mm
Ball Pitch — 0.8mm
I/O Interface — SSTL-15

数据手册与资源

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