IAUCN04S7N019GATMA1 vs IAUC120N04S6N009ATMA1 对比

详细并排对比 IAUCN04S7N019GATMA1 出自 Infineon 和 IAUC120N04S6N009ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IAUC120N04S6N009ATMA1 IAUC120N04S6N009ATMA1 - 40V 120A 0.9mΩ OptiMOS 6 MOSFET | Infineon

IAUC120N04S6N009ATMA1 - 40V 120A 0.9mΩ OptiMOS 6 MOSFET | Infineon

IAUC120N04S6N009ATMA1 ✓ 量产中

规格对比

参数 IAUCN04S7N019GATMA1 IAUC120N04S6N009ATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.82 $1.60
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 7 —
晶体管类型 N-Channel MOSFET —
Drain-Source Voltage (VDS) 40 V —
Continuous Drain Current (ID, Tj) 147 A —
On-Resistance RDS(on) typical 1.95 mOhm —
Maximum Power Dissipation (Tc) 81 W —
封装 PG-THSOG-4-1 (SSO4G 5x6 mm) PG-TDSON-8-33 (5x6 mm)
安装类型 Surface Mount Surface Mount
Substrate Compatibility IMS substrates and legacy PCB —
Automotive Qualification AEC-Q101 (per family datasheet) AEC-Q101
RoHS 状态 Compliant —
Lead-Free Yes —
Tape and Reel Packaging Yes (per ATMA1 suffix) —
工作温度范围 [DATA_NEEDED: junction temperature range from datasheet] —
Part Family — OptiMOS 6 40V
Polarity / Channel Type — N-Channel
Drain-Source Voltage (V_DSS) — 40 V
Continuous Drain Current (I_D, Tc) — 120 A
脉冲漏极电流 — [DATA_NEEDED: pulsed I_D value]
R_DS(on) max @ V_GS=10V — 0.9 mΩ
Gate Threshold Voltage V_GS(th) typ — [DATA_NEEDED: V_GS(th) typical value]
Total Gate Charge Q_g typ — [DATA_NEEDED: Q_g typical]
Power Dissipation (Tc) — 150 W
Thermal Resistance R_thJC max — 1.0 K/W
工作结温 — -55 °C to +175 °C
MSL 等级 — 1
RoHS — Compliant
Lead-Free / Halogen-Free — Yes (per Infineon product page)

数据手册与资源

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