IGLT65R035D2ATMA1 vs IGLR70R200D2SXUMA1 对比

详细并排对比 IGLT65R035D2ATMA1 出自 Infineon 和 IGLR70R200D2SXUMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IGLT65R035D2ATMA1 IGLT65R035D2ATMA1 - 650V 47A CoolGaN™ G5 Transistor | Infineon

IGLT65R035D2ATMA1 - 650V 47A CoolGaN™ G5 Transistor | Infineon

IGLT65R035D2ATMA1 ✓ 量产中
Infineon
IGLR70R200D2SXUMA1 IGLR70R200D2SXUMA1 - 700V 9.3A GaN FET, 200mΩ | Infineon

IGLR70R200D2SXUMA1 - 700V 9.3A GaN FET, 200mΩ | Infineon

IGLR70R200D2SXUMA1 ✓ 量产中

规格对比

参数 IGLT65R035D2ATMA1 IGLR70R200D2SXUMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $5.10 $1.24
Manufacturer Infineon Technologies Infineon Technologies
Product Family CoolGaN™ G5 TOLT CoolGaN G5
晶体管类型 N-Channel enhancement-mode GaN HEMT —
Drain-Source Voltage (Vdss) 650 V —
Continuous Drain Current (Id) at Tc 47 A —
Maximum Power Dissipation (Pd) at Tc 154 W —
On-Resistance (Rds(on)) [DATA_NEEDED: typical Rds(on) in mohm] —
Gate Threshold Voltage (Vgs(th)) [DATA_NEEDED: typical Vgs(th)] —
Input Capacitance (Ciss) at Vds=400V 540 pF —
工作温度范围 [DATA_NEEDED: Tj min/max] -40 °C to +150 °C
封装 PG-HDSOP-16-8 (top-side cooled) PG-TSON-8-8 (surface mount, ThinPAK top-cooled)
安装类型 Surface Mount —
Cooling Configuration Top-side cooled (TOLT) —
MSL 等级 [DATA_NEEDED: MSL rating] —
RoHS 状态 Compliant —
Lead-Free Yes —
Production Wafer Size 200 mm (8 inch) —
Channel Type — N-Channel
Technology — GaN HEMT (E-mode, enhancement-mode)
Drain-Source Voltage (VDS) — 700 V
Continuous Drain Current (ID, Tc) — 9.3 A
Power Dissipation (PD, Tc) — 34 W
On-Resistance (RDS(on), max) — 200 mΩ
Total Gate Charge (Qg) — 1.26 nC
Output Capacitance (Coss) — 91 pF
Reverse Transfer Capacitance (Crss) — 0.21 pF
Gate Threshold Voltage (VGS(th), typ) — 1.2 V
RoHS — Compliant

数据手册与资源

浏览全部产品 创建 BOM 获取报价