IGLT65R035D2ATMA1 vs IGLR70R200D2SXUMA1 Comparison
Detailed side-by-side comparison of IGLT65R035D2ATMA1 by Infineon and IGLR70R200D2SXUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IGLT65R035D2ATMA1 - 650V 47A CoolGaNβ’ G5 Transistor | Infineon
IGLT65R035D2ATMA1 β ActiveInfineon
IGLR70R200D2SXUMA1
IGLR70R200D2SXUMA1 - 700V 9.3A GaN FET, 200mΞ© | Infineon
IGLR70R200D2SXUMA1 β ActiveSpecification Comparison
| Parameter | IGLT65R035D2ATMA1 | IGLR70R200D2SXUMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $5.10 | $1.24 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | CoolGaNβ’ G5 TOLT | CoolGaN G5 |
| Transistor Type | N-Channel enhancement-mode GaN HEMT | β |
| Drain-Source Voltage (Vdss) | 650 V | β |
| Continuous Drain Current (Id) at Tc | 47 A | β |
| Maximum Power Dissipation (Pd) at Tc | 154 W | β |
| On-Resistance (Rds(on)) | [DATA_NEEDED: typical Rds(on) in mohm] | β |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: typical Vgs(th)] | β |
| Input Capacitance (Ciss) at Vds=400V | 540 pF | β |
| Operating Temperature Range | [DATA_NEEDED: Tj min/max] | -40 Β°C to +150 Β°C |
| Package | PG-HDSOP-16-8 (top-side cooled) | PG-TSON-8-8 (surface mount, ThinPAK top-cooled) |
| Mounting Type | Surface Mount | β |
| Cooling Configuration | Top-side cooled (TOLT) | β |
| MSL Level | [DATA_NEEDED: MSL rating] | β |
| RoHS Status | Compliant | β |
| Lead-Free | Yes | β |
| Production Wafer Size | 200 mm (8 inch) | β |
| Channel Type | β | N-Channel |
| Technology | β | GaN HEMT (E-mode, enhancement-mode) |
| Drain-Source Voltage (VDS) | β | 700 V |
| Continuous Drain Current (ID, Tc) | β | 9.3 A |
| Power Dissipation (PD, Tc) | β | 34 W |
| On-Resistance (RDS(on), max) | β | 200 mΞ© |
| Total Gate Charge (Qg) | β | 1.26 nC |
| Output Capacitance (Coss) | β | 91 pF |
| Reverse Transfer Capacitance (Crss) | β | 0.21 pF |
| Gate Threshold Voltage (VGS(th), typ) | β | 1.2 V |
| RoHS | β | Compliant |