IPB020N10N5ATMA1 vs IPB020N10N5LFATMA1 对比
详细并排对比 IPB020N10N5ATMA1 出自 Infineon 和 IPB020N10N5LFATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Infineon
IPB020N10N5LFATMA1 - 100V 176A 2mΩ OptiMOS 5 Linear FET | Infineon
IPB020N10N5LFATMA1 ✓ 量产中规格对比
| 参数 | IPB020N10N5ATMA1 | IPB020N10N5LFATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $3.30 | $2.62 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IPB020N10N5ATMA1 | — |
| Technology | OptiMOS 5 | N-Channel Enhancement-Mode Power MOSFET |
| 晶体管类型 | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at Tc | 120 A | — |
| Maximum Drain Current (ID max, per Infineon product page) | 176 A | — |
| On-Resistance RDS(on) max | 2 mΩ | — |
| Power Dissipation (PD) at Tc | 375 W | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical VGS(th)] | — |
| 封装 | PG-TO263-3 (D2PAK-3) | PG-TO263-3 (D2PAK) |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度范围 | -55C to +175C | -55 °C to +175 °C |
| Channel Type | N-Channel | — |
| Packaging | Tape & Reel (ATMA1 suffix) | — |
| RoHS 状态 | Compliant | Compliant |
| Product Family | — | OptiMOS 5 Linear FET |
| Drain-Source Voltage (VDS) max | — | 100 V |
| Continuous Drain Current (Tc) | — | 176 A |
| Silicon-Limited Drain Current | — | 289 A |
| Package-Limited Drain Current | — | 120 A |
| Pulsed Drain Current (VDS=56V, tp=10ms) | — | 10.2 A |
| On-State Resistance RDS(on) max | — | 2.0 mΩ |
| Total Power Dissipation (Tc) | — | 313 W |
| Gate Threshold Voltage VGS(th) typ | — | 2.5 V |
| MSL 等级 | — | 1 |
| Marking Code | — | 020N10LF |