IPB020N10N5ATMA1 vs IPB020N10N5LFATMA1 Vergleich
Detaillierter Direktvergleich von IPB020N10N5ATMA1 von Infineon und IPB020N10N5LFATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IPB020N10N5LFATMA1 - 100V 176A 2mΩ OptiMOS 5 Linear FET | Infineon
IPB020N10N5LFATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IPB020N10N5ATMA1 | IPB020N10N5LFATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $3,30 | $2,62 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IPB020N10N5ATMA1 | — |
| Technology | OptiMOS 5 | N-Channel Enhancement-Mode Power MOSFET |
| Transistortyp | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at Tc | 120 A | — |
| Maximum Drain Current (ID max, per Infineon product page) | 176 A | — |
| On-Resistance RDS(on) max | 2 mΩ | — |
| Power Dissipation (PD) at Tc | 375 W | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical VGS(th)] | — |
| Gehäuse | PG-TO263-3 (D2PAK-3) | PG-TO263-3 (D2PAK) |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperaturbereich | -55C to +175C | -55 °C to +175 °C |
| Channel Type | N-Channel | — |
| Packaging | Tape & Reel (ATMA1 suffix) | — |
| RoHS-Status | Compliant | Compliant |
| Product Family | — | OptiMOS 5 Linear FET |
| Drain-Source Voltage (VDS) max | — | 100 V |
| Continuous Drain Current (Tc) | — | 176 A |
| Silicon-Limited Drain Current | — | 289 A |
| Package-Limited Drain Current | — | 120 A |
| Pulsed Drain Current (VDS=56V, tp=10ms) | — | 10.2 A |
| On-State Resistance RDS(on) max | — | 2.0 mΩ |
| Total Power Dissipation (Tc) | — | 313 W |
| Gate Threshold Voltage VGS(th) typ | — | 2.5 V |
| MSL-Level | — | 1 |
| Marking Code | — | 020N10LF |