IPB020N10N5ATMA1 vs IPB020N10N5LFATMA1 Comparison
Detailed side-by-side comparison of IPB020N10N5ATMA1 by Infineon and IPB020N10N5LFATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPB020N10N5LFATMA1 - 100V 176A 2mΞ© OptiMOS 5 Linear FET | Infineon
IPB020N10N5LFATMA1 β ActiveSpecification Comparison
| Parameter | IPB020N10N5ATMA1 | IPB020N10N5LFATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $3.30 | $2.62 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IPB020N10N5ATMA1 | β |
| Technology | OptiMOS 5 | N-Channel Enhancement-Mode Power MOSFET |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (VDS) | 100 V | β |
| Continuous Drain Current (ID) at Tc | 120 A | β |
| Maximum Drain Current (ID max, per Infineon product page) | 176 A | β |
| On-Resistance RDS(on) max | 2 mΞ© | β |
| Power Dissipation (PD) at Tc | 375 W | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical VGS(th)] | β |
| Package | PG-TO263-3 (D2PAK-3) | PG-TO263-3 (D2PAK) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55C to +175C | -55 Β°C to +175 Β°C |
| Channel Type | N-Channel | β |
| Packaging | Tape & Reel (ATMA1 suffix) | β |
| RoHS Status | Compliant | Compliant |
| Product Family | β | OptiMOS 5 Linear FET |
| Drain-Source Voltage (VDS) max | β | 100 V |
| Continuous Drain Current (Tc) | β | 176 A |
| Silicon-Limited Drain Current | β | 289 A |
| Package-Limited Drain Current | β | 120 A |
| Pulsed Drain Current (VDS=56V, tp=10ms) | β | 10.2 A |
| On-State Resistance RDS(on) max | β | 2.0 mΞ© |
| Total Power Dissipation (Tc) | β | 313 W |
| Gate Threshold Voltage VGS(th) typ | β | 2.5 V |
| MSL Level | β | 1 |
| Marking Code | β | 020N10LF |