IPB200N25N3GATMA1 vs IPB107N20N3GATMA1 对比
详细并排对比 IPB200N25N3GATMA1 出自 Infineon 和 IPB107N20N3GATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IPB200N25N3GATMA1 | IPB107N20N3GATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.65 | $1.18 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 3 | — |
| 晶体管类型 | N-Channel MOSFET | N-Channel MOSFET |
| 封装 | PG-TO263-3 (D2PAK) | PG-TO263-3 (D2PAK) |
| 安装类型 | Surface Mount | Surface Mount |
| Drain-Source Voltage (V_DS) | 250 V | — |
| Continuous Drain Current (I_D) at T_C | 64 A | — |
| Power Dissipation (P_D) at T_C | 300 W | — |
| R_DS(on) max at V_GS=10V | 20 mOhm | — |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: V_GS(th) typical/max] | — |
| Technology | OptiMOS 3 (Trench) | OptiMOS 3 trench MOSFET |
| Gate Charge (Q_g) | [DATA_NEEDED: Q_g typical] | — |
| 工作温度范围 | -55C to +175C | [DATA_NEEDED: Tj max and operating range] |
| RoHS 状态 | Compliant | Compliant |
| 无卤 | Yes (per Infineon OptiMOS family datasheet) | — |
| MSL 等级 | 1 (per JEDEC J-STD-020) | — |
| 引脚数量 | 3 (2+tab) | 3 (Drain, Source, Gate) + Tab |
| Product Family | — | OptiMOS 3 |
| Drain-Source Voltage (VDS) | — | 200 V |
| Continuous Drain Current (ID) at Tc | — | 88 A |
| Maximum Power Dissipation (Pd) at Tc | — | 300 W |
| On-Resistance RDS(on) at VGS=10V | — | 9.6 milliohm (typical, per third-party listing) |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/range] |