IPB60R040CFD7ATMA1 vs IPD50R399CPATMA1 对比

详细并排对比 IPB60R040CFD7ATMA1 出自 Infineon 和 IPD50R399CPATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IPB60R040CFD7ATMA1 IPB60R040CFD7ATMA1 - 600V 50A 40mΩ CoolMOS CFD7 MOSFET | Infineon

IPB60R040CFD7ATMA1 - 600V 50A 40mΩ CoolMOS CFD7 MOSFET | Infineon

IPB60R040CFD7ATMA1 ✓ 量产中
Infineon
IPD50R399CPATMA1 IPD50R399CPATMA1 - 500V N-Ch CoolMOS CP, 9A DPAK | Infineon

IPD50R399CPATMA1 - 500V N-Ch CoolMOS CP, 9A DPAK | Infineon

IPD50R399CPATMA1 ✓ 量产中

规格对比

参数 IPB60R040CFD7ATMA1 IPD50R399CPATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $5.19 $0.89
Manufacturer Infineon Technologies Infineon Technologies
Product Family CoolMOS CFD7 CoolMOS CP
Technology Superjunction (SJ) N-Channel MOSFET CoolMOS CP (superjunction)
Drain-Source Voltage (VDS) 600 V —
Continuous Drain Current (ID, Tc=25°C) 50 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
On-Resistance RDS(on) max @ VGS=10V 40 mΩ —
Gate Threshold Voltage VGS(th) typ 4 V —
Total Gate Charge Qg typ [DATA_NEEDED: Qg] —
功耗(TC=25°C) 227 W —
工作温度范围 -55°C to +150°C —
封装 PG-TO263-3-2 (D2PAK) PG-TO252-3-313 (DPAK)
安装类型 Surface Mount Surface Mount
Integrated Body Diode Yes - ultra-fast CoolMOS CFD7 diode —
MSL 等级 1 —
RoHS 状态 Compliant —
Lead-Free Yes —
Target Applications Soft-switching topologies (ZVS phase-shift full-bridge, LLC) —
Channel Type — N-Channel
Drain-Source Voltage (V_DS) — 500 V
Continuous Drain Current (I_D, Tc) — 9 A
Power Dissipation (P_D, Tc) — 83 W
On-Resistance (R_DS(on), typ) — 0.399 ohm
引脚数量 — 3 (Gate, Drain, Source)
Lead Free / RoHS — ROHS3 Compliant
Configuration — Single
Operating Mode — Enhancement-mode
Datasheet Series — IPD50R399CP

数据手册与资源

浏览全部产品 创建 BOM 获取报价