IPB60R280P7ATMA1 vs IPB100N12S305ATMA1 对比
详细并排对比 IPB60R280P7ATMA1 出自 Infineon 和 IPB100N12S305ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IPB60R280P7ATMA1 | IPB100N12S305ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.88 | $1.25 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | CoolMOS P7 (600 V) | OptiMOS Power MOSFET |
| 晶体管类型 | N-Channel MOSFET | — |
| Technology | Superjunction (SJ) | — |
| Drain-Source Voltage (V_DSS) | 600 V | — |
| Continuous Drain Current (I_D, T_C=25°C) | 12 A | — |
| On-Resistance R_DS(on) max (V_GS=10V) | 280 mOhm | — |
| Gate-Source Threshold V_GS(th) typ | 3.5 V | — |
| Power Dissipation P_D (T_C=25°C) | 53 W | — |
| 封装 | PG-TO263-3 (D2PAK) | — |
| 安装类型 | Surface Mount | Surface Mount |
| 引脚数量 | 3 (2 + Tab) | — |
| 工作温度范围 | -55 °C to +150 °C (T_j max) | -55 C to +175 C (TJ) |
| Configuration | Single N-Channel | — |
| RoHS 状态 | Compliant | — |
| Lead-Free | Yes | — |
| Generation | 7th Gen CoolMOS (successor to P6) | — |
| Channel Type | — | N-Channel Enhancement Mode |
| Drain-Source Voltage (VDS) | — | 120 V |
| Continuous Drain Current (ID) | — | 100 A (Tc) |
| Power Dissipation (PD) | — | 300 W (Tc) |
| On-Resistance (RDS(on)) | — | 4.8 mOhm (typical) |
| Total Gate Charge (Qg) | — | 185 nC |
| 封装 / 外壳 | — | PG-TO263-3-1 (D2PAK, surface mount) |
| 引脚数 | — | 3 (Gate, Drain, Source) |
| Automotive Qualification | — | AEC-Q101 Qualified |
| 湿敏等级（MSL） | — | MSL1 (up to 260 C peak reflow) |
| Avalanche Tested | — | 100% Avalanche Tested |
| RoHS Compliance | — | RoHS Compliant (Green Product) |