IPB60R280P7ATMA1 vs IPB100N12S305ATMA1 Comparison
Detailed side-by-side comparison of IPB60R280P7ATMA1 by Infineon and IPB100N12S305ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IPB60R280P7ATMA1 | IPB100N12S305ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.88 | $1.25 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | CoolMOS P7 (600 V) | OptiMOS Power MOSFET |
| Transistor Type | N-Channel MOSFET | β |
| Technology | Superjunction (SJ) | β |
| Drain-Source Voltage (V_DSS) | 600 V | β |
| Continuous Drain Current (I_D, T_C=25Β°C) | 12 A | β |
| On-Resistance R_DS(on) max (V_GS=10V) | 280 mOhm | β |
| Gate-Source Threshold V_GS(th) typ | 3.5 V | β |
| Power Dissipation P_D (T_C=25Β°C) | 53 W | β |
| Package | PG-TO263-3 (D2PAK) | β |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Count | 3 (2 + Tab) | β |
| Operating Temperature Range | -55 Β°C to +150 Β°C (T_j max) | -55 C to +175 C (TJ) |
| Configuration | Single N-Channel | β |
| RoHS Status | Compliant | β |
| Lead-Free | Yes | β |
| Generation | 7th Gen CoolMOS (successor to P6) | β |
| Channel Type | β | N-Channel Enhancement Mode |
| Drain-Source Voltage (VDS) | β | 120 V |
| Continuous Drain Current (ID) | β | 100 A (Tc) |
| Power Dissipation (PD) | β | 300 W (Tc) |
| On-Resistance (RDS(on)) | β | 4.8 mOhm (typical) |
| Total Gate Charge (Qg) | β | 185 nC |
| Package / Case | β | PG-TO263-3-1 (D2PAK, surface mount) |
| Number of Pins | β | 3 (Gate, Drain, Source) |
| Automotive Qualification | β | AEC-Q101 Qualified |
| Moisture Sensitivity Level (MSL) | β | MSL1 (up to 260 C peak reflow) |
| Avalanche Tested | β | 100% Avalanche Tested |
| RoHS Compliance | β | RoHS Compliant (Green Product) |