IPB65R041CFD7ATMA1 vs IPB60R040CFD7ATMA1 对比
详细并排对比 IPB65R041CFD7ATMA1 出自 Infineon 和 IPB60R040CFD7ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IPB65R041CFD7ATMA1 | IPB60R040CFD7ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $2.92 | $5.19 |
| Technology | CoolMOS CFD7 superjunction N-channel MOSFET | Superjunction (SJ) N-Channel MOSFET |
| Drain-Source Voltage (V_DS max) | 650 V | — |
| Continuous Drain Current (I_D, Tc=25°C) | 50 A | — |
| On-Resistance R_DS(on) max (V_GS=10V) | 41 mΩ | — |
| Power Dissipation (P_D, Tc=25°C) | 227 W | — |
| Gate-Source Voltage (V_GS) | ±20 V (max) | — |
| Gate Threshold Voltage (V_GS(th) typ) | 4.5 V | — |
| Total Gate Charge (Q_G typ) | [DATA_NEEDED: Q_G value] | — |
| Body Diode Reverse Recovery (Q_rr) | [DATA_NEEDED: Q_rr value] | — |
| 工作结温 | -55°C to +150°C | — |
| 封装 | PG-TO263-3 (D2PAK, surface mount) | PG-TO263-3-2 (D2PAK) |
| 安装类型 | Surface Mount | Surface Mount |
| 引脚数量 | 3 (Gate / Drain / Source, tab = Drain) | — |
| RoHS 状态 | Compliant | Compliant |
| 无卤 | Yes | — |
| MSL 等级 | 1 (per JEDEC J-STD-020) | 1 |
| Series | CoolMOS™ CFD7 | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | CoolMOS CFD7 |
| Drain-Source Voltage (VDS) | — | 600 V |
| Continuous Drain Current (ID, Tc=25°C) | — | 50 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max @ VGS=10V | — | 40 mΩ |
| Gate Threshold Voltage VGS(th) typ | — | 4 V |
| Total Gate Charge Qg typ | — | [DATA_NEEDED: Qg] |
| 功耗（TC=25°C） | — | 227 W |
| 工作温度范围 | — | -55°C to +150°C |
| Integrated Body Diode | — | Yes - ultra-fast CoolMOS CFD7 diode |
| Lead-Free | — | Yes |
| Target Applications | — | Soft-switching topologies (ZVS phase-shift full-bridge, LLC) |