IPB65R041CFD7ATMA1 vs IPB60R040CFD7ATMA1 Comparison

Detailed side-by-side comparison of IPB65R041CFD7ATMA1 by Infineon and IPB60R040CFD7ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IPB65R041CFD7ATMA1 IPB60R040CFD7ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $2.92 $5.19
Technology CoolMOS CFD7 superjunction N-channel MOSFET Superjunction (SJ) N-Channel MOSFET
Drain-Source Voltage (V_DS max) 650 V
Continuous Drain Current (I_D, Tc=25°C) 50 A
On-Resistance R_DS(on) max (V_GS=10V) 41 mΩ
Power Dissipation (P_D, Tc=25°C) 227 W
Gate-Source Voltage (V_GS) ±20 V (max)
Gate Threshold Voltage (V_GS(th) typ) 4.5 V
Total Gate Charge (Q_G typ) [DATA_NEEDED: Q_G value]
Body Diode Reverse Recovery (Q_rr) [DATA_NEEDED: Q_rr value]
Operating Junction Temperature -55°C to +150°C
Package PG-TO263-3 (D2PAK, surface mount) PG-TO263-3-2 (D2PAK)
Mounting Type Surface Mount Surface Mount
Pin Count 3 (Gate / Drain / Source, tab = Drain)
RoHS Status Compliant Compliant
Halogen-Free Yes
MSL Level 1 (per JEDEC J-STD-020) 1
Series CoolMOS™ CFD7
Manufacturer Infineon Technologies
Product Family CoolMOS CFD7
Drain-Source Voltage (VDS) 600 V
Continuous Drain Current (ID, Tc=25°C) 50 A
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) max @ VGS=10V 40 mΩ
Gate Threshold Voltage VGS(th) typ 4 V
Total Gate Charge Qg typ [DATA_NEEDED: Qg]
Power Dissipation (Tc=25°C) 227 W
Operating Temperature Range -55°C to +150°C
Integrated Body Diode Yes - ultra-fast CoolMOS CFD7 diode
Lead-Free Yes
Target Applications Soft-switching topologies (ZVS phase-shift full-bridge, LLC)

Datasheets & Resources

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