IPD50N10S3L16ATMA2 vs IPD50N10S3L16ATMA1 对比
详细并排对比 IPD50N10S3L16ATMA2 出自 Infineon 和 IPD50N10S3L16ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Infineon
IPD50N10S3L16ATMA2 - 100V 50A 15mΩ N-Ch OptiMOS-T MOSFET | Infineon
IPD50N10S3L16ATMA2 ✓ 量产中规格对比
| 参数 | IPD50N10S3L16ATMA2 | IPD50N10S3L16ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.96 | $0.89 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS-T | OptiMOS-T |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at Tc=25°C | 50 A | — |
| Pulsed Drain Current (IDM) | 180 A | — |
| Maximum R_DS(on) at VGS=10V | 15 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | — |
| Total Power Dissipation (Ptot) at Tc=25°C | 100 W | — |
| 工作温度范围 | -55 °C to +175 °C (junction) | -55C to +175C |
| 封装 | PG-TO252-3-11 (DPAK) | PG-TO252-3-11 (DPAK) |
| 安装类型 | Surface Mount | Surface Mount |
| 引脚数量 | 3 (2 + Tab) | — |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 |
| RoHS 状态 | Compliant | Compliant |
| MSL 等级 | 1 (per JEDEC J-STD-020) | — |
| Delivery Form | Tape and Reel (T&R) | — |
| Part Number | — | IPD50N10S3L16ATMA1 |
| 晶体管类型 | — | N-Channel MOSFET |
| Drain-Source Voltage (V_DS) | — | 100 V |
| Continuous Drain Current (I_D, T_C=25C) | — | 50 A |
| Pulsed Drain Current (I_DM) | — | 200 A |
| R_DS(on) max @ V_GS=10V | — | 15 mΩ |
| Gate Threshold Voltage (V_GS(th)) | — | 2.5 V (typ) |
| Power Dissipation (P_D, T_C=25C) | — | 100 W |
| Packaging | — | Tape & Reel |