IPD50N10S3L16ATMA2 vs IPD50N10S3L16ATMA1 Comparison

Detailed side-by-side comparison of IPD50N10S3L16ATMA2 by Infineon and IPD50N10S3L16ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPD50N10S3L16ATMA1 IPD50N10S3L16ATMA1 - 100V N-Ch 50A OptiMOS MOSFET DPAK | Infineon

IPD50N10S3L16ATMA1 - 100V N-Ch 50A OptiMOS MOSFET DPAK | Infineon

IPD50N10S3L16ATMA1 βœ“ Active

Specification Comparison

Parameter IPD50N10S3L16ATMA2 IPD50N10S3L16ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.96 $0.89
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS-T OptiMOS-T
FET Type N-Channel β€”
Drain-Source Voltage (VDS) 100 V β€”
Continuous Drain Current (ID) at Tc=25Β°C 50 A β€”
Pulsed Drain Current (IDM) 180 A β€”
Maximum R_DS(on) at VGS=10V 15 mΞ© β€”
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical value] β€”
Total Power Dissipation (Ptot) at Tc=25Β°C 100 W β€”
Operating Temperature Range -55 Β°C to +175 Β°C (junction) -55C to +175C
Package PG-TO252-3-11 (DPAK) PG-TO252-3-11 (DPAK)
Mounting Type Surface Mount Surface Mount
Pin Count 3 (2 + Tab) β€”
Automotive Qualification AEC-Q101 qualified AEC-Q101
RoHS Status Compliant Compliant
MSL Level 1 (per JEDEC J-STD-020) β€”
Delivery Form Tape and Reel (T&R) β€”
Part Number β€” IPD50N10S3L16ATMA1
Transistor Type β€” N-Channel MOSFET
Drain-Source Voltage (V_DS) β€” 100 V
Continuous Drain Current (I_D, T_C=25C) β€” 50 A
Pulsed Drain Current (I_DM) β€” 200 A
R_DS(on) max @ V_GS=10V β€” 15 mΞ©
Gate Threshold Voltage (V_GS(th)) β€” 2.5 V (typ)
Power Dissipation (P_D, T_C=25C) β€” 100 W
Packaging β€” Tape & Reel

Datasheets & Resources

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