IPD65R225C7ATMA1 vs IPL65R230C7AUMA1 对比

详细并排对比 IPD65R225C7ATMA1 出自 Infineon 和 IPL65R230C7AUMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IPD65R225C7ATMA1 IPD65R225C7ATMA1 - 650V 225mΩ 11A CoolMOS C7 N-FET | Infineon

IPD65R225C7ATMA1 - 650V 225mΩ 11A CoolMOS C7 N-FET | Infineon

IPD65R225C7ATMA1 ✓ 量产中
Infineon
IPL65R230C7AUMA1 IPL65R230C7AUMA1 - 650V CoolMOS C7 MOSFET 230mOhm | Infineon

IPL65R230C7AUMA1 - 650V CoolMOS C7 MOSFET 230mOhm | Infineon

IPL65R230C7AUMA1 ✓ 量产中

规格对比

参数 IPD65R225C7ATMA1 IPL65R230C7AUMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.34 $1.02
Manufacturer Infineon Technologies Infineon Technologies
Series CoolMOS C7 CoolMOS C7
晶体管类型 N-Channel MOSFET N-Channel MOSFET
Technology Super-junction (SJ) / CoolMOS Superjunction (CoolMOS C7)
Drain-Source Voltage (VDSS) 650 V —
Continuous Drain Current (ID) at TC 11 A —
Power Dissipation (PD) at TC 63 W —
On-Resistance RDS(on) max 225 mΩ —
Gate-Source Voltage (VGS) ±20 V (max) —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: typical VGS(th)] [DATA_NEEDED: VGS(th) typical/min/max]
工作温度范围 -55°C to +150°C —
封装 PG-TO252-3 (DPAK) PG-VSON-4 (surface mount, 4 pins)
安装类型 Surface Mount Surface Mount
引脚数 3 (2 + tab) —
MSL 等级 1 (per JEDEC J-STD-020) [DATA_NEEDED: MSL rating]
RoHS 状态 Compliant Compliant
Avalanche Energy Rated Yes (per datasheet) —
Drain-Source Voltage (VDS) — 650 V
Continuous Drain Current (ID) at Tc — 10 A
Power Dissipation (PD) at Tc — 67 W
Drain-Source On-Resistance (RDS(on)) max — 230 mOhm
Gate Charge (Qg) — [DATA_NEEDED: Qg typical at VGS=10V]
工作结温 — -55 C to +150 C
ESD Protection — Yes (integrated, per datasheet)
无卤 — Yes (per Infineon product page)

数据手册与资源

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