IPL65R230C7AUMA1 vs IPL60R105P7AUMA1 对比

详细并排对比 IPL65R230C7AUMA1 出自 Infineon 和 IPL60R105P7AUMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IPL65R230C7AUMA1 IPL65R230C7AUMA1 - 650V CoolMOS C7 MOSFET 230mOhm | Infineon

IPL65R230C7AUMA1 - 650V CoolMOS C7 MOSFET 230mOhm | Infineon

IPL65R230C7AUMA1 ✓ 量产中

规格对比

参数 IPL65R230C7AUMA1 IPL60R105P7AUMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.02 $0.82
Manufacturer Infineon Technologies Infineon Technologies
Series CoolMOS C7 CoolMOS P7
晶体管类型 N-Channel MOSFET —
Technology Superjunction (CoolMOS C7) Superjunction (SJ) N-Channel Power MOSFET
Drain-Source Voltage (VDS) 650 V 600 V
Continuous Drain Current (ID) at Tc 10 A 33 A
Power Dissipation (PD) at Tc 67 W —
Drain-Source On-Resistance (RDS(on)) max 230 mOhm —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min/max] —
Gate Charge (Qg) [DATA_NEEDED: Qg typical at VGS=10V] —
工作结温 -55 C to +150 C —
封装 PG-VSON-4 (surface mount, 4 pins) PG-VSON-4 (4-pin SMD with exposed pad)
安装类型 Surface Mount Surface Mount
ESD Protection Yes (integrated, per datasheet) —
RoHS 状态 Compliant Compliant
无卤 Yes (per Infineon product page) Yes
MSL 等级 [DATA_NEEDED: MSL rating] [DATA_NEEDED: MSL rating]
On-Resistance (RDS(on)) max — 105 mΩ
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Power Dissipation (Ptot) at Tc — 137 W
Gate Threshold Voltage (VGS(th)) typ — 3.5 V
Gate Charge (Qg) typ — 45 nC
工作温度范围 — -55C to +150C
Channel Type — N-Channel
Lead-Free — Yes

数据手册与资源

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