IPL65R230C7AUMA1 vs IPL60R105P7AUMA1 Comparison

Detailed side-by-side comparison of IPL65R230C7AUMA1 by Infineon and IPL60R105P7AUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IPL65R230C7AUMA1 IPL60R105P7AUMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Manufacturer Infineon Technologies Infineon Technologies
Series CoolMOS C7 CoolMOS P7
Transistor Type N-Channel MOSFET —
Technology Superjunction (CoolMOS C7) Superjunction (SJ) N-Channel Power MOSFET
Drain-Source Voltage (VDS) 650 V 600 V
Continuous Drain Current (ID) at Tc 10 A 33 A
Power Dissipation (PD) at Tc 67 W —
Drain-Source On-Resistance (RDS(on)) max 230 mOhm —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min/max] —
Gate Charge (Qg) [DATA_NEEDED: Qg typical at VGS=10V] —
Operating Junction Temperature -55 C to +150 C —
Package PG-VSON-4 (surface mount, 4 pins) PG-VSON-4 (4-pin SMD with exposed pad)
Mounting Type Surface Mount Surface Mount
ESD Protection Yes (integrated, per datasheet) —
RoHS Status Compliant Compliant
Halogen Free Yes (per Infineon product page) Yes
MSL Level [DATA_NEEDED: MSL rating] [DATA_NEEDED: MSL rating]
On-Resistance (RDS(on)) max — 105 mΩ
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Power Dissipation (Ptot) at Tc — 137 W
Gate Threshold Voltage (VGS(th)) typ — 3.5 V
Gate Charge (Qg) typ — 45 nC
Operating Temperature Range — -55C to +150C
Channel Type — N-Channel
Lead-Free — Yes

Datasheets & Resources

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