IPP037N08N3GXKSA1 vs IPP075N15N3GXKSA1 对比
详细并排对比 IPP037N08N3GXKSA1 出自 Infineon 和 IPP075N15N3GXKSA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IPP037N08N3GXKSA1 | IPP075N15N3GXKSA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.32 | $1.92 |
| FET Type | N-Channel | — |
| Technology | MOSFET (Metal Oxide) - OptiMOS™ 3 | N-Channel MOSFET (OptiMOS 3) |
| Drain to Source Voltage (Vdss) | 80 V | — |
| Continuous Drain Current (Id) @ Tc=25°C | 100 A | — |
| RDS(on) Max @ VGS=10V | 3.75 mΩ | — |
| Drive Voltage (Max RDS(on), Min RDS(on)) | 6 V, 10 V | — |
| Power Dissipation (Pd) @ Tc=25°C | 214 W | — |
| 封装 | PG-TO220-3 (Through Hole) | PG-TO220-3 (TO-220 through-hole) |
| 安装类型 | Through Hole | Through Hole |
| 引脚数量 | 3 | — |
| 工作温度范围 | -55°C to +175°C (junction) | [DATA_NEEDED: junction operating temperature range] |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th) typ/min/max] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typ @ VGS=10V] | [DATA_NEEDED: total gate charge] |
| Avalanche Energy Rating (EAS) | [DATA_NEEDED: EAS] | — |
| RoHS 状态 | Compliant | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 3 |
| Drain-Source Voltage (VDS) | — | 150 V |
| Continuous Drain Current (ID, Tc=25C) | — | 100 A |
| Power Dissipation (PD, Tc=25C) | — | 300 W |
| On-State Resistance (RDS(on) max, VGS=10V) | — | 7.5 mOhm |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: gate-source voltage absolute max] |
| Gate Threshold Voltage (VGS(th) typ) | — | [DATA_NEEDED: VGS(th) typical] |
| Lead-Free / RoHS | — | RoHS Compliant |
| Ordering Code Suffix | — | GXKSA1 (Tube pack, RoHS compliant) |