IPP037N08N3GXKSA1 vs IPP075N15N3GXKSA1 Comparison

Detailed side-by-side comparison of IPP037N08N3GXKSA1 by Infineon and IPP075N15N3GXKSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPP075N15N3GXKSA1 IPP075N15N3GXKSA1 - 150V 100A OptiMOS 3 Power MOSFET | Infineon

IPP075N15N3GXKSA1 - 150V 100A OptiMOS 3 Power MOSFET | Infineon

IPP075N15N3GXKSA1 βœ“ Active

Specification Comparison

Parameter IPP037N08N3GXKSA1 IPP075N15N3GXKSA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.32 $1.92
FET Type N-Channel β€”
Technology MOSFET (Metal Oxide) - OptiMOSβ„’ 3 N-Channel MOSFET (OptiMOS 3)
Drain to Source Voltage (Vdss) 80 V β€”
Continuous Drain Current (Id) @ Tc=25Β°C 100 A β€”
RDS(on) Max @ VGS=10V 3.75 mΞ© β€”
Drive Voltage (Max RDS(on), Min RDS(on)) 6 V, 10 V β€”
Power Dissipation (Pd) @ Tc=25Β°C 214 W β€”
Package PG-TO220-3 (Through Hole) PG-TO220-3 (TO-220 through-hole)
Mounting Type Through Hole Through Hole
Pin Count 3 β€”
Operating Temperature Range -55Β°C to +175Β°C (junction) [DATA_NEEDED: junction operating temperature range]
Gate Threshold Voltage (Vgs(th)) [DATA_NEEDED: Vgs(th) typ/min/max] β€”
Total Gate Charge (Qg) [DATA_NEEDED: Qg typ @ VGS=10V] [DATA_NEEDED: total gate charge]
Avalanche Energy Rating (EAS) [DATA_NEEDED: EAS] β€”
RoHS Status Compliant β€”
Manufacturer β€” Infineon Technologies
Product Family β€” OptiMOS 3
Drain-Source Voltage (VDS) β€” 150 V
Continuous Drain Current (ID, Tc=25C) β€” 100 A
Power Dissipation (PD, Tc=25C) β€” 300 W
On-State Resistance (RDS(on) max, VGS=10V) β€” 7.5 mOhm
Gate-Source Voltage (VGS) β€” [DATA_NEEDED: gate-source voltage absolute max]
Gate Threshold Voltage (VGS(th) typ) β€” [DATA_NEEDED: VGS(th) typical]
Lead-Free / RoHS β€” RoHS Compliant
Ordering Code Suffix β€” GXKSA1 (Tube pack, RoHS compliant)

Datasheets & Resources

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