IPP069N20NM6AKSA1 vs IRFB4020PBF 对比
详细并排对比 IPP069N20NM6AKSA1 出自 Infineon 和 IRFB4020PBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Infineon
IPP069N20NM6AKSA1 - 200V 136A OptiMOS 6 N-Channel MOSFET | Infineon
IPP069N20NM6AKSA1 ✓ 量产中
规格对比
| 参数 | IPP069N20NM6AKSA1 | IRFB4020PBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $4.10 | $1.38 |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 200 V | 200 V |
| Continuous Drain Current (ID) at TC=25C | 136 A | — |
| Continuous Drain Current (ID) at TA=25C | 15.3 A | — |
| Power Dissipation (PD) at TC=25C | 300 W | — |
| Power Dissipation (PD) at TA=25C | 3.8 W | — |
| On-Resistance RDS(on) max at VGS=10V | 6.9 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) value] | — |
| Gate Charge (Qg) | [DATA_NEEDED: Qg value] | — |
| Total Gate Charge at VGS=10V (Qg) | [DATA_NEEDED: Qg value] | — |
| 工作温度范围 | -55C to +175C | — |
| 封装 | PG-TO220-3-1 (TO-220-3 through-hole, 3+tab) | TO-220AB (through-hole) |
| 安装类型 | Through Hole | Through Hole |
| Technology | OptiMOS 6 trench MOSFET | IR MOSFET (HEXFET) |
| RoHS 状态 | Compliant | — |
| Lead-Free | Yes | — |
| MSL 等级 | N/A (through-hole package) | — |
| Tab Connection | Electrically connected to Drain | — |
| Continuous Drain Current (ID) at TC | — | 18 A |
| Power Dissipation (PD) at TC | — | 100 W |
| RDS(on) Maximum | — | 100 mOhm |
| Gate-Source Voltage (VGS) Maximum | — | 20 V |
| Thermal Resistance, Junction-to-Case (RthJC) | — | 1.43 C/W |
| 工作结温 | — | 175 C (max) |
| 引脚数量 | — | 3 (Gate, Drain, Source) |
| Lead-Free (PbF suffix) | — | Yes |
| Market Qualification | — | Consumer |
| Recommended Use | — | Class-D audio amplifier and high-efficiency switching applications |