IPP069N20NM6AKSA1 vs IRFB4020PBF Comparison

Detailed side-by-side comparison of IPP069N20NM6AKSA1 by Infineon and IRFB4020PBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IPP069N20NM6AKSA1 IRFB4020PBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $4.10 $1.38
FET Type N-Channel N-Channel
Drain-Source Voltage (VDS) 200 V 200 V
Continuous Drain Current (ID) at TC=25C 136 A β€”
Continuous Drain Current (ID) at TA=25C 15.3 A β€”
Power Dissipation (PD) at TC=25C 300 W β€”
Power Dissipation (PD) at TA=25C 3.8 W β€”
On-Resistance RDS(on) max at VGS=10V 6.9 mΞ© β€”
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) value] β€”
Gate Charge (Qg) [DATA_NEEDED: Qg value] β€”
Total Gate Charge at VGS=10V (Qg) [DATA_NEEDED: Qg value] β€”
Operating Temperature Range -55C to +175C β€”
Package PG-TO220-3-1 (TO-220-3 through-hole, 3+tab) TO-220AB (through-hole)
Mounting Type Through Hole Through Hole
Technology OptiMOS 6 trench MOSFET IR MOSFET (HEXFET)
RoHS Status Compliant β€”
Lead-Free Yes β€”
MSL Level N/A (through-hole package) β€”
Tab Connection Electrically connected to Drain β€”
Continuous Drain Current (ID) at TC β€” 18 A
Power Dissipation (PD) at TC β€” 100 W
RDS(on) Maximum β€” 100 mOhm
Gate-Source Voltage (VGS) Maximum β€” 20 V
Thermal Resistance, Junction-to-Case (RthJC) β€” 1.43 C/W
Operating Junction Temperature β€” 175 C (max)
Pin Count β€” 3 (Gate, Drain, Source)
Lead-Free (PbF suffix) β€” Yes
Market Qualification β€” Consumer
Recommended Use β€” Class-D audio amplifier and high-efficiency switching applications

Datasheets & Resources

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