IPP600N25N3GXKSA1 vs IRF640NPBF 对比
详细并排对比 IPP600N25N3GXKSA1 出自 Infineon 和 IRF640NPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IPP600N25N3GXKSA1 | IRF640NPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.62 | $0.88 |
| Manufacturer | Infineon Technologies | Infineon (formerly International Rectifier) |
| Series | OptiMOS 3 | — |
| Part Status | Active | — |
| FET Type | N-Channel | — |
| Technology | MOSFET (Metal Oxide) | HEXFET (5th Generation) |
| Drain-to-Source Voltage (VDS) | 250 V | 200 V |
| Continuous Drain Current (ID) at Tc=25C | 25 A | — |
| Static Drain-to-Source On-Resistance (RDS(on)) max | 60 mOhm at VGS=10V | — |
| Power Dissipation (PD) at Tc=25C | 136 W | 150 W |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | — |
| 封装 / 外壳 | TO-220-3 (PG-TO220-3-1) | — |
| 安装类型 | Through Hole | Through Hole |
| 工作温度范围 | -55C to +175C (junction) | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical value] | 44.7 nC |
| Reverse Recovery Time (trr) | [DATA_NEEDED: trr typical value] | — |
| Lead Free Status | Lead Free / RoHS Compliant | — |
| 引脚数量 | 3 (Gate, Drain, Source) | — |
| Continuous Drain Current (ID) at Tc | — | 18 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Gate-to-Source Voltage (VGS) max | — | ±20 V |
| Static Drain-to-Source On-Resistance (RDS(on)) | — | 150 mOhm max at VGS = 10 V |
| 工作结温 | — | -55C to +150C |
| 晶体管类型 | — | N-Channel Enhancement Mode |
| 封装 | — | TO-220AB (through-hole, 3-pin) |
| Avalanche Energy Rated | — | Yes |
| dv/dt Rating | — | Dynamic, rated |
| RoHS 状态 | — | Compliant |
| Lead-Free | — | Yes (PBF suffix) |