IPP600N25N3GXKSA1 vs IRF640NPBF Comparison

Detailed side-by-side comparison of IPP600N25N3GXKSA1 by Infineon and IRF640NPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPP600N25N3GXKSA1 IPP600N25N3GXKSA1 - 250V 25A 60mOhm N-Ch OptiMOS 3 | Infineon

IPP600N25N3GXKSA1 - 250V 25A 60mOhm N-Ch OptiMOS 3 | Infineon

IPP600N25N3GXKSA1 βœ“ Active

Specification Comparison

Parameter IPP600N25N3GXKSA1 IRF640NPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.62 $0.25
Manufacturer Infineon Technologies β€”
Series OptiMOS 3 β€”
Part Status Active β€”
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) HEXFET (5th Generation)
Drain-to-Source Voltage (VDS) 250 V 200 V
Continuous Drain Current (ID) at Tc=25C 25 A β€”
Static Drain-to-Source On-Resistance (RDS(on)) max 60 mOhm at VGS=10V β€”
Power Dissipation (PD) at Tc=25C 136 W β€”
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical value] β€”
Package / Case TO-220-3 (PG-TO220-3-1) β€”
Mounting Type Through Hole Through-Hole (TO-220 tab)
Operating Temperature Range -55C to +175C (junction) β€”
Total Gate Charge (Qg) [DATA_NEEDED: Qg typical value] 44.7 nC
Reverse Recovery Time (trr) [DATA_NEEDED: trr typical value] β€”
Lead Free Status Lead Free / RoHS Compliant β€”
Pin Count 3 (Gate, Drain, Source) 3 (Gate, Drain, Source)
Continuous Drain Current (ID) at Tc β€” 18 A
Power Dissipation (PD) at Tc β€” 150 W
On-Resistance RDS(on) max at VGS=10V β€” 150 mOhm
Gate-to-Source Voltage (VGS) max β€” [DATA_NEEDED: VGS max rating]
Package β€” TO-220AB (through-hole)
Operating Junction Temperature β€” -55 C to +150 C
Avalanche Energy Rated β€” Yes
dv/dt Ruggedness β€” Yes (dynamic rated)
Configuration β€” Single N-Channel MOSFET
RoHS Status β€” Compliant (PBF suffix)
Lead Finish β€” Lead-free (PBF)

Datasheets & Resources

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