IPT015N10NF2SATMA1 vs IPP100N12S305AKSA1 对比
详细并排对比 IPT015N10NF2SATMA1 出自 Infineon 和 IPP100N12S305AKSA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Infineon
IPP100N12S305AKSA1 - 120V 100A OptiMOS N-Channel MOSFET | Infineon
IPP100N12S305AKSA1 ✓ 量产中规格对比
| 参数 | IPT015N10NF2SATMA1 | IPP100N12S305AKSA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $3.10 | $2.05 |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 100 V | 120 V |
| Continuous Drain Current (ID, Tc) | 315 A | — |
| Continuous Drain Current (ID, Ta) | 35 A | — |
| On-Resistance (RDS(on)) at VGS=10V | 1.5 mΩ | — |
| Gate-Source Threshold (VGS(th)) | 3.8 V at 267 µA | — |
| Total Power Dissipation (Ta) | 3.8 W | — |
| Total Power Dissipation (Tc) | 300 W | — |
| 工作温度范围 | -55 °C to +175 °C | — |
| 封装 | PG-HSOF-8-10 (9-pin, 8+tab) | TO-220 (PG-TO220-3-1) |
| 安装类型 | Surface Mount | Through Hole |
| Technology | OptiMOS trench, N-channel enhancement | OptiMOS trench |
| Gate Drive Voltage (typ) | 10 V | — |
| 单脉冲雪崩能量 | [DATA_NEEDED: EAS value] | — |
| RoHS 状态 | Compliant | — |
| 晶体管类型 | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at Tc | — | 100 A |
| 脉冲漏极电流 | — | [DATA_NEEDED: pulsed ID value] |
| Maximum Power Dissipation (Ptot) at Tc | — | 300 W |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| On-Resistance RDS(on) | — | [DATA_NEEDED: RDS(on) at VGS=10V] |
| Avalanche Energy, Single Pulse | — | [DATA_NEEDED: EAS] |
| 工作结温 | — | -55 °C to +175 °C |
| 引脚数量 | — | 3 |
| MSL Moisture Sensitivity Level | — | 1 (260 °C peak reflow) |
| Automotive Qualification | — | AEC-Q101 qualified |
| Avalanche Tested | — | 100% tested |
| RoHS Compliance | — | Compliant (Green product) |