IPT015N10NF2SATMA1 vs IPP100N12S305AKSA1 Comparison

Detailed side-by-side comparison of IPT015N10NF2SATMA1 by Infineon and IPP100N12S305AKSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IPT015N10NF2SATMA1 IPP100N12S305AKSA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
FET Type N-Channel —
Drain-Source Voltage (VDS) 100 V 120 V
Continuous Drain Current (ID, Tc) 315 A —
Continuous Drain Current (ID, Ta) 35 A —
On-Resistance (RDS(on)) at VGS=10V 1.5 mΩ —
Gate-Source Threshold (VGS(th)) 3.8 V at 267 µA —
Total Power Dissipation (Ta) 3.8 W —
Total Power Dissipation (Tc) 300 W —
Operating Temperature Range -55 °C to +175 °C —
Package PG-HSOF-8-10 (9-pin, 8+tab) TO-220 (PG-TO220-3-1)
Mounting Type Surface Mount Through Hole
Technology OptiMOS trench, N-channel enhancement OptiMOS trench
Gate Drive Voltage (typ) 10 V —
Single Pulse Avalanche Energy [DATA_NEEDED: EAS value] —
RoHS Status Compliant —
Transistor Type — N-Channel MOSFET
Continuous Drain Current (ID) at Tc — 100 A
Pulsed Drain Current — [DATA_NEEDED: pulsed ID value]
Maximum Power Dissipation (Ptot) at Tc — 300 W
Gate-Source Voltage (VGS) max — ±20 V
On-Resistance RDS(on) — [DATA_NEEDED: RDS(on) at VGS=10V]
Avalanche Energy, Single Pulse — [DATA_NEEDED: EAS]
Operating Junction Temperature — -55 °C to +175 °C
Pin Count — 3
MSL Moisture Sensitivity Level — 1 (260 °C peak reflow)
Automotive Qualification — AEC-Q101 qualified
Avalanche Tested — 100% tested
RoHS Compliance — Compliant (Green product)

Datasheets & Resources

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