IPT015N10NF2SATMA1 vs IPT008N06NM5LFATMA1 对比
详细并排对比 IPT015N10NF2SATMA1 出自 Infineon 和 IPT008N06NM5LFATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Infineon
IPT008N06NM5LFATMA1 - 60V 454A 0.8mΩ N-Ch MOSFET HSOF-8 | Infineon
IPT008N06NM5LFATMA1 ✓ 量产中规格对比
| 参数 | IPT015N10NF2SATMA1 | IPT008N06NM5LFATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $3.10 | $5.40 |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 100 V | 60 V |
| Continuous Drain Current (ID, Tc) | 315 A | 454 A |
| Continuous Drain Current (ID, Ta) | 35 A | — |
| On-Resistance (RDS(on)) at VGS=10V | 1.5 mΩ | — |
| Gate-Source Threshold (VGS(th)) | 3.8 V at 267 µA | — |
| Total Power Dissipation (Ta) | 3.8 W | — |
| Total Power Dissipation (Tc) | 300 W | — |
| 工作温度范围 | -55 °C to +175 °C | -55 °C to +175 °C (TJ) |
| 封装 | PG-HSOF-8-10 (9-pin, 8+tab) | PG-HSOF-8 (single, flat-lead) |
| 安装类型 | Surface Mount | Surface Mount |
| Technology | OptiMOS trench, N-channel enhancement | Trench MOSFET (OptiMOS 5) |
| Gate Drive Voltage (typ) | 10 V | — |
| 单脉冲雪崩能量 | [DATA_NEEDED: EAS value] | — |
| RoHS 状态 | Compliant | Compliant |
| Manufacturer | — | Infineon Technologies |
| Part Family | — | OptiMOS 5 / Linear FET |
| 晶体管类型 | — | N-Channel MOSFET |
| 脉冲漏极电流 | — | [DATA_NEEDED: pulsed ID] |
| On-Resistance RDS(on) at VGS=10 V | — | 0.8 mΩ |
| Gate-Source Threshold Voltage VGS(th) | — | 3.6 V (typ, 250 µA test) |
| Power Dissipation (Tc) | — | 278 W |
| Gate Drive (recommended) | — | 10 V (logic-level compatible above 4.5 V VGS) |
| MSL 等级 | — | 1 (per JEDEC J-STD-020) |
| REACH Status | — | Compliant |
| AEC-Q100 | — | not_qualified (industrial-grade by default) |