IPT015N10NF2SATMA1 vs IPT008N06NM5LFATMA1 Comparison

Detailed side-by-side comparison of IPT015N10NF2SATMA1 by Infineon and IPT008N06NM5LFATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPT015N10NF2SATMA1

IPT015N10NF2SATMA1 - 100V 315A 1.5mΞ© OptiMOS MOSFET | Infineon

IPT015N10NF2SATMA1 βœ“ Active
Infineon
IPT008N06NM5LFATMA1

IPT008N06NM5LFATMA1 - 60V 454A 0.8mΞ© N-Ch MOSFET HSOF-8 | Infineon

IPT008N06NM5LFATMA1 βœ“ Active

Specification Comparison

Parameter IPT015N10NF2SATMA1 IPT008N06NM5LFATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $3.10 $5.40
FET Type N-Channel β€”
Drain-Source Voltage (VDS) 100 V 60 V
Continuous Drain Current (ID, Tc) 315 A 454 A
Continuous Drain Current (ID, Ta) 35 A β€”
On-Resistance (RDS(on)) at VGS=10V 1.5 mΞ© β€”
Gate-Source Threshold (VGS(th)) 3.8 V at 267 Β΅A β€”
Total Power Dissipation (Ta) 3.8 W β€”
Total Power Dissipation (Tc) 300 W β€”
Operating Temperature Range -55 Β°C to +175 Β°C -55 Β°C to +175 Β°C (TJ)
Package PG-HSOF-8-10 (9-pin, 8+tab) PG-HSOF-8 (single, flat-lead)
Mounting Type Surface Mount Surface Mount
Technology OptiMOS trench, N-channel enhancement Trench MOSFET (OptiMOS 5)
Gate Drive Voltage (typ) 10 V β€”
Single-Pulse Avalanche Energy [DATA_NEEDED: EAS value] β€”
RoHS Status Compliant Compliant
Manufacturer β€” Infineon Technologies
Part Family β€” OptiMOS 5 / Linear FET
Transistor Type β€” N-Channel MOSFET
Pulsed Drain Current β€” [DATA_NEEDED: pulsed ID]
On-Resistance RDS(on) at VGS=10 V β€” 0.8 mΞ©
Gate-Source Threshold Voltage VGS(th) β€” 3.6 V (typ, 250 Β΅A test)
Power Dissipation (Tc) β€” 278 W
Gate Drive (recommended) β€” 10 V (logic-level compatible above 4.5 V VGS)
MSL Level β€” 1 (per JEDEC J-STD-020)
REACH Status β€” Compliant
AEC-Q100 β€” not_qualified (industrial-grade by default)

Datasheets & Resources

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