IPT039N15N5ATMA1 vs BSC019N04LSTATMA1 对比
详细并排对比 IPT039N15N5ATMA1 出自 Infineon 和 BSC019N04LSTATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Infineon
IPT039N15N5ATMA1 - 150V 190A 3.9mΩ OptiMOS 5 Power MOSFET | Infineon
IPT039N15N5ATMA1 ✓ 量产中规格对比
| 参数 | IPT039N15N5ATMA1 | BSC019N04LSTATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $4.42 | $1.21 |
| Technology | OptiMOS 5 (N-channel trench MOSFET) | OptiMOS 5 (N-channel trench MOSFET) |
| Drain-Source Voltage (VDS) max | 150 V | — |
| Gate-Source Voltage (VGS) max | 20 V | — |
| Continuous Drain Current (ID) at TA=25C | 21 A | — |
| Continuous Drain Current (ID) at TC=25C | 190 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM value] | [DATA_NEEDED: pulsed ID limit] |
| On-Resistance RDS(on) max at VGS=10V | 3.9 mΩ | — |
| Gate Threshold Voltage VGS(th) typ | 4.6 V | 1.7 V |
| Power Dissipation at TA=25C | 3.8 W | — |
| Power Dissipation at TC=25C | 319 W | — |
| 封装 | PG-HSOF-8 (TOLL) Surface Mount | TDSON-8 (SuperSO8) 5x6 mm |
| 工作温度范围 | -55C to +175C (junction) | -55 C to +150 C |
| 安装类型 | Surface Mount | Surface Mount |
| 引脚数量 | 8 (8 + exposed tab) | — |
| MSL 等级 | [DATA_NEEDED: MSL rating] | 1 (unlimited) |
| RoHS 状态 | Compliant | Compliant |
| Avalanche Energy (EAS) | [DATA_NEEDED: EAS value] | — |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID, Tc=25C) | — | 161 A |
| Continuous Drain Current (ID, Ta=25C) | — | 28 A |
| On-Resistance RDS(on) max @ VGS=10V | — | 1.9 mOhm |
| On-Resistance RDS(on) max @ VGS=4.5V | — | [DATA_NEEDED: RDS(on) at 4.5V] |
| Total Gate Charge Qg typ | — | 85 nC |
| Power Dissipation PD (Tc=25C) | — | 94 W |
| Lead-Free / Halogen-Free | — | Yes / Yes |
| Avalanche Rated | — | Yes |