IQEH50NE2LM7ZCGATMA1 vs IAUCN08S7L024ATMA1 对比
详细并排对比 IQEH50NE2LM7ZCGATMA1 出自 Infineon 和 IAUCN08S7L024ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Infineon
IQEH50NE2LM7ZCGATMA1 - 25V 422A OptiMOS 7 N-Channel MOSFET | Infineon
IQEH50NE2LM7ZCGATMA1 ✓ 量产中规格对比
| 参数 | IQEH50NE2LM7ZCGATMA1 | IAUCN08S7L024ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.42 | $1.68 |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 7 Power-Transistor | — |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (Vds) Max | 25 V | — |
| Continuous Drain Current (Ta) | 54 A | — |
| Continuous Drain Current (Tc) | 422 A | — |
| Maximum On-Resistance (Rds(on)) | 0.5 mOhm | — |
| Gate Threshold Voltage (Vgs(th)) | 1.7 V | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Power Dissipation (Tc) | 150 W | — |
| Maximum Junction Temperature | +175 degrees C | — |
| 工作温度范围 | -55 degrees C to +175 degrees C | -55C to +175C (Tj) |
| 封装 | PG-TTFN-9-3 | PG-TDSON-8-34 (SSO8 5x6 mm²) |
| 安装类型 | Surface Mount | Surface Mount |
| Technology | OptiMOS 7 (Trench-Gate) | OptiMOS™ 7 N-channel trench MOSFET |
| RoHS 状态 | Compliant | Compliant |
| Qualification | Industrial grade per Infineon datasheet | — |
| Drain-Source Voltage (VDS) | — | 80 V |
| Continuous Drain Current (ID) | — | 177 A (Tj) |
| Continuous Drain Current (Silicon-limited) | — | 150 A |
| On-Resistance RDS(on) max | — | 2.4 mΩ at VGS=10 V |
| Power Dissipation (PD) | — | 148 W (Tc) |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: VGS(th) typical/min/max] |
| Total Gate Charge Qg | — | [DATA_NEEDED: Qg typ] |
| Avalanche Energy Rated | — | Yes (single-pulse) |
| Automotive Qualification | — | AEC-Q101 qualified |
| MSL 等级 | — | MSL1 (per JEDEC J-STD-020) |