IQEH50NE2LM7ZCGATMA1 vs IAUCN08S7L024ATMA1 Comparison

Detailed side-by-side comparison of IQEH50NE2LM7ZCGATMA1 by Infineon and IAUCN08S7L024ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IAUCN08S7L024ATMA1 IAUCN08S7L024ATMA1 - 80V 2.4mΩ OptiMOS 7 N-MOSFET | Infineon

IAUCN08S7L024ATMA1 - 80V 2.4mΩ OptiMOS 7 N-MOSFET | Infineon

IAUCN08S7L024ATMA1 ✓ Active

Specification Comparison

Parameter IQEH50NE2LM7ZCGATMA1 IAUCN08S7L024ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Manufacturer Infineon Technologies —
Product Family OptiMOS 7 Power-Transistor —
Polarity / Channel Type N-Channel —
Drain-Source Voltage (Vds) Max 25 V —
Continuous Drain Current (Ta) 54 A —
Continuous Drain Current (Tc) 422 A —
Maximum On-Resistance (Rds(on)) 0.5 mOhm —
Gate Threshold Voltage (Vgs(th)) 1.7 V —
Power Dissipation (Ta) 2.5 W —
Power Dissipation (Tc) 150 W —
Maximum Junction Temperature +175 degrees C —
Operating Temperature Range -55 degrees C to +175 degrees C -55C to +175C (Tj)
Package PG-TTFN-9-3 PG-TDSON-8-34 (SSO8 5x6 mm²)
Mounting Type Surface Mount Surface Mount
Technology OptiMOS 7 (Trench-Gate) OptiMOS™ 7 N-channel trench MOSFET
RoHS Status Compliant Compliant
Qualification Industrial grade per Infineon datasheet —
Drain-Source Voltage (VDS) — 80 V
Continuous Drain Current (ID) — 177 A (Tj)
Continuous Drain Current (Silicon-limited) — 150 A
On-Resistance RDS(on) max — 2.4 mΩ at VGS=10 V
Power Dissipation (PD) — 148 W (Tc)
Gate Threshold Voltage VGS(th) — [DATA_NEEDED: VGS(th) typical/min/max]
Total Gate Charge Qg — [DATA_NEEDED: Qg typ]
Avalanche Energy Rated — Yes (single-pulse)
Automotive Qualification — AEC-Q101 qualified
MSL Level — MSL1 (per JEDEC J-STD-020)

Datasheets & Resources

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